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Increasing the photoluminescence intensity of Ge islands by chemical etching
Gao, F; Huang, CJ; Huang, DD; Li, JP; Kong, MY; Zeng, YP; Li, JM; Lin, LY
Corresponding AuthorGao, F()
2001-10-01
Source PublicationCHINESE PHYSICS
ISSN1009-1963
Volume10Issue:10Pages:966-969
AbstractSelf-assembled Ge islands were grown on Si(100) substrate by Si2H6-Ge molecular beam epitaxy. After being subjected to chemical etching, it is found that the photoluminescence from the etched Ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands.
KeywordGe islands chemical etching photoluminescence Si2H6-Ge molecular beam epitaxy
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:000171600300016
PublisherCHINESE PHYSICAL SOC
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/111666
Collection中国科学院金属研究所
Corresponding AuthorGao, F
Affiliation1.Shaanxi Normal Univ, Dept Phys, Xian 710062, Peoples R China
2.Acad Sinica, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
3.Acad Sinica, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Gao, F,Huang, CJ,Huang, DD,et al. Increasing the photoluminescence intensity of Ge islands by chemical etching[J]. CHINESE PHYSICS,2001,10(10):966-969.
APA Gao, F.,Huang, CJ.,Huang, DD.,Li, JP.,Kong, MY.,...&Lin, LY.(2001).Increasing the photoluminescence intensity of Ge islands by chemical etching.CHINESE PHYSICS,10(10),966-969.
MLA Gao, F,et al."Increasing the photoluminescence intensity of Ge islands by chemical etching".CHINESE PHYSICS 10.10(2001):966-969.
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