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Changing the size and shape of Ge island by chemical etching
Gao, F; Huang, CJ; Huang, DD; Li, JP; Sun, DZ; Kong, MY; Zeng, YP; Li, JM; Lin, LY
Corresponding AuthorGao, F()
2001-09-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume231Issue:1-2Pages:17-21
AbstractSelf-assembled Ge islands were grown on Si (1 0 0) substrate by Si2H6-Ge molecular beam epitaxy. Subjected to a chemical etching, it is found that the size and shape (i.e. ratio of height to base width) of Ge islands change with etching time. In addition, the photoluminescence from the etched Ge islands shifted to the higher energy side compared to that of the as-deposited Ge islands. Our results demonstrated that chemical etching can be a way to change the size and shape of the as-deposited islands as well as their luminescence property. (C) 2001 Elsevier Science B.V. All rights reserved.
Keywordatomic force microscopy etching nanostructures molecular beam epitaxy semiconducting germanium semiconducting silicon
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000170122600004
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/112917
Collection中国科学院金属研究所
Corresponding AuthorGao, F
Affiliation1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Gao, F,Huang, CJ,Huang, DD,et al. Changing the size and shape of Ge island by chemical etching[J]. JOURNAL OF CRYSTAL GROWTH,2001,231(1-2):17-21.
APA Gao, F.,Huang, CJ.,Huang, DD.,Li, JP.,Sun, DZ.,...&Lin, LY.(2001).Changing the size and shape of Ge island by chemical etching.JOURNAL OF CRYSTAL GROWTH,231(1-2),17-21.
MLA Gao, F,et al."Changing the size and shape of Ge island by chemical etching".JOURNAL OF CRYSTAL GROWTH 231.1-2(2001):17-21.
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