| Fe-diffusion-induced defects in InP annealed in iron phosphide ambient | |
| Zhao, YW; Dong, HW; Jiao, JH; Zhao, JQ; Lin, LY | |
| Corresponding Author | Zhao, YW() |
| 2002-04-01 | |
| Source Publication | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
 |
| ISSN | 0021-4922 |
| Volume | 41Issue:4APages:1929-1931 |
| Abstract | Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to study deep levels in semi-insulating (SI) InP prepared by annealing undoped InP in pure phosphorus (PP) and iron phosphide (IP) ambient. Defects are much fewer in IP SI-InP than in PP SI-InP. Deep-level-related PL emission could only be detected in IP SI-InP. The results indicate that Fe diffusion inhibits the thermal formation of a number of defects in annealed InP. A complex defect has been formed in the annealing process in the presence of Fe. |
| Keyword | indium phosphide annealing semi-insulating defect diffusion |
| DOI | 10.1143/JJAP.41.1929 |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000175703100005 |
| Publisher | INST PURE APPLIED PHYSICS |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/113771 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Zhao, YW |
| Affiliation | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Mat Sci Lab, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Zhao, YW,Dong, HW,Jiao, JH,et al. Fe-diffusion-induced defects in InP annealed in iron phosphide ambient[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,2002,41(4A):1929-1931. |
| APA | Zhao, YW,Dong, HW,Jiao, JH,Zhao, JQ,&Lin, LY.(2002).Fe-diffusion-induced defects in InP annealed in iron phosphide ambient.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,41(4A),1929-1931. |
| MLA | Zhao, YW,et al."Fe-diffusion-induced defects in InP annealed in iron phosphide ambient".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41.4A(2002):1929-1931. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment