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Positron-annihilation study of compensation defects in InP
Shan, YY; Deng, AH; Ling, CC; Fung, S; Ling, CD; Zhao, YW; Sun, TN; Sun, NF
Corresponding AuthorShan, YY()
2002-02-15
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume91Issue:4Pages:1998-2001
AbstractPositron-annihilation lifetime and positron-annihilation Doppler-broadening (PADB) spectroscopies have been employed to investigate the formation of vacancy-type compensation defects in n-type undoped liquid encapsulated Czochrolski grown InP, which undergoes conduction-type conversions under high temperature annealing. N-type InP becomes p-type semiconducting by short time annealing at 700 degreesC, and then turns into n-type again after further annealing but with a much higher resistivity. Long time annealing at 950 degreesC makes the material semi-insulating. Positron lifetime measurements show that the positron average lifetime tau(av) increases from 245 ps to a higher value of 247 ps for the first n-type to p-type conversion and decreases to 240 ps for the ensuing p-type to n-type conversion. The value of tau(av) increases slightly to 242 ps upon further annealing and attains a value of 250 ps under 90 h annealing at 950 degreesC. These results together with those of PADB measurements are explained by the model proposed in our previous study. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy-type defects and the progressive variation of their concentrations during annealing are related to the electrical properties of the bulk InP material. (C) 2002 American Institute of Physics.
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000173553800036
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:8[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/114066
Collection中国科学院金属研究所
Corresponding AuthorShan, YY
Affiliation1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
2.Sichuan Univ, Dept Appl Phys, Sichuan, Peoples R China
3.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
4.Hebei Semicond Res Inst, Shijiazhuang, Peoples R China
Recommended Citation
GB/T 7714
Shan, YY,Deng, AH,Ling, CC,et al. Positron-annihilation study of compensation defects in InP[J]. JOURNAL OF APPLIED PHYSICS,2002,91(4):1998-2001.
APA Shan, YY.,Deng, AH.,Ling, CC.,Fung, S.,Ling, CD.,...&Sun, NF.(2002).Positron-annihilation study of compensation defects in InP.JOURNAL OF APPLIED PHYSICS,91(4),1998-2001.
MLA Shan, YY,et al."Positron-annihilation study of compensation defects in InP".JOURNAL OF APPLIED PHYSICS 91.4(2002):1998-2001.
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