Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si

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	Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si
	Wang, QY; Tan, LW; Wang, J; Yu, YH; Lin, LY
通讯作者	Wang, QY()
	2002-11-20
发表期刊	INTERNATIONAL JOURNAL OF MODERN PHYSICS B
ISSN	0217-9792
卷号	16 期号:28-29 页码:4271-4274
摘要	In this paper, we report the fabrication of Si-based double hetero-epitaxial SOI materials Si/gamma-Al2O3/Si. First, single crystalline gamma-Al2O3 (100) insulator films were grown epitaxially on Si(100) by LPCVD, and then, Si(100) epitaxial films were grown on gamma-Al2O3 (100)/Si(100) epi-substrates using a CVD method similar to silicon on sapphire (SOS) epitaxial growth. The Si/gamma-Al2O3 (100)/Si(100) SOI materials are characterized in detail by RHEED, XRD and AES techniques. The results demonstrate that the device-quality novel SOI materials Si/gamma-Al2O3 (100)/Si(100) has been fabricated successfully and can be used for application of MOS device.
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Applied ; Physics, Condensed Matter ; Physics, Mathematical
WOS记录号	WOS:000179800800021
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/114175
专题	中国科学院金属研究所
通讯作者	Wang, QY
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wang, QY,Tan, LW,Wang, J,et al. Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B,2002,16(28-29):4271-4274.
APA	Wang, QY,Tan, LW,Wang, J,Yu, YH,&Lin, LY.(2002).Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si.INTERNATIONAL JOURNAL OF MODERN PHYSICS B,16(28-29),4271-4274.
MLA	Wang, QY,et al."Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si".INTERNATIONAL JOURNAL OF MODERN PHYSICS B 16.28-29(2002):4271-4274.