| Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers | |
| Zhao, YW; Sun, NF; Dong, HW; Jiao, JH; Zhao, JQ; Sun, TN; Lin, LY | |
| Corresponding Author | Sun, NF() |
| 2002-04-30 | |
| Source Publication | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
 |
| ISSN | 0921-5107 |
| Volume | 91Pages:521-524 |
| Abstract | Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved. |
| Keyword | indium phosphide semi-insulating annealing PICTS photoluminescence |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Materials Science ; Physics |
| WOS Subject | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| WOS ID | WOS:000174864400112 |
| Publisher | ELSEVIER SCIENCE SA |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/114232 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Sun, NF |
| Affiliation | 1.Hebei Semicond Res Inst, Shijiazhuang 050002, Hebei, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Mat Sci Lab, Beijing 100083, Peoples R China |
| Recommended Citation GB/T 7714 | Zhao, YW,Sun, NF,Dong, HW,et al. Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2002,91:521-524. |
| APA | Zhao, YW.,Sun, NF.,Dong, HW.,Jiao, JH.,Zhao, JQ.,...&Lin, LY.(2002).Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,91,521-524. |
| MLA | Zhao, YW,et al."Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 91(2002):521-524. |
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