IMR OpenIR
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
Zhao, YW; Sun, NF; Dong, HW; Jiao, JH; Zhao, JQ; Sun, TN; Lin, LY
Corresponding AuthorSun, NF()
2002-04-30
Source PublicationMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN0921-5107
Volume91Pages:521-524
AbstractSemi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywordindium phosphide semi-insulating annealing PICTS photoluminescence
Indexed BySCI
Language英语
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Condensed Matter
WOS IDWOS:000174864400112
PublisherELSEVIER SCIENCE SA
Citation statistics
Cited Times:9[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/114232
Collection中国科学院金属研究所
Corresponding AuthorSun, NF
Affiliation1.Hebei Semicond Res Inst, Shijiazhuang 050002, Hebei, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
3.Chinese Acad Sci, Inst Semicond, Mat Sci Lab, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Zhao, YW,Sun, NF,Dong, HW,et al. Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2002,91:521-524.
APA Zhao, YW.,Sun, NF.,Dong, HW.,Jiao, JH.,Zhao, JQ.,...&Lin, LY.(2002).Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,91,521-524.
MLA Zhao, YW,et al."Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 91(2002):521-524.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhao, YW]'s Articles
[Sun, NF]'s Articles
[Dong, HW]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhao, YW]'s Articles
[Sun, NF]'s Articles
[Dong, HW]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhao, YW]'s Articles
[Sun, NF]'s Articles
[Dong, HW]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.