Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers

IMR OpenIR

	Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
	Zhao, YW ; Sun, NF ; Dong, HW ; Jiao, JH ; Zhao, JQ ; Sun, TN ; Lin, LY
通讯作者	Sun, NF()
	2002-04-30
发表期刊	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN	0921-5107
卷号	91 页码:521-524
摘要	Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved.
关键词	indium phosphide semi-insulating annealing PICTS photoluminescence
收录类别	SCI
语种	英语
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Condensed Matter
WOS记录号	WOS:000174864400112
出版者	ELSEVIER SCIENCE SA
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/114232
专题	中国科学院金属研究所
通讯作者	Sun, NF
作者单位	1.Hebei Semicond Res Inst, Shijiazhuang 050002, Hebei, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Mat Sci Lab, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, YW,Sun, NF,Dong, HW,et al. Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2002,91:521-524.
APA	Zhao, YW.,Sun, NF.,Dong, HW.,Jiao, JH.,Zhao, JQ.,...&Lin, LY.(2002).Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,91,521-524.
MLA	Zhao, YW,et al."Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 91(2002):521-524.