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Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
Ling, CC; Mui, WK; Lam, CH; Beling, CD; Fung, S; Lui, MK; Cheah, KW; Li, KF; Zhao, YW; Gong, M
Corresponding AuthorLing, CC(ccling@hku.hk)
2002-05-27
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume80Issue:21Pages:3934-3936
AbstractPositron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (V(Ga)) related defect. Isochronal annealing studies showed at 300 degreesC annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (similar to2x10(17) cm(-3)) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the V(Ga) defect, at least for cases with annealing temperatures above 300 degreesC, V(Ga) is not the acceptor responsible for the p-type conduction. (C) 2002 American Institute of Physics.
DOI10.1063/1.1482419
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000175709000018
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:21[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/114597
Collection中国科学院金属研究所
Corresponding AuthorLing, CC
Affiliation1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
2.Hong Kong Baptist Univ, Dept Phys, Kowloon Tong, Hong Kong, Peoples R China
3.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
4.Sichuan Univ, Dept Phys, Chengdu 610064, Peoples R China
Recommended Citation
GB/T 7714
Ling, CC,Mui, WK,Lam, CH,et al. Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence[J]. APPLIED PHYSICS LETTERS,2002,80(21):3934-3936.
APA Ling, CC.,Mui, WK.,Lam, CH.,Beling, CD.,Fung, S.,...&Gong, M.(2002).Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence.APPLIED PHYSICS LETTERS,80(21),3934-3936.
MLA Ling, CC,et al."Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence".APPLIED PHYSICS LETTERS 80.21(2002):3934-3936.
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