Preparation and structure of nano-crystalline WO3(Si) thin films by pulsed excimer laser deposition

IMR OpenIR

	Preparation and structure of nano-crystalline WO3(Si) thin films by pulsed excimer laser deposition
	Fang, GJ ; Liu, ZL ; Yao, KL
通讯作者	Fang, GJ()
	2002
发表期刊	JOURNAL OF INORGANIC MATERIALS
ISSN	1000-324X
卷号	17 期号:1 页码:139-144
摘要	WO,, thin films were successfully synthesized on Si (111) substrate at different conditions by using scanning excimer laser ablation technique. The structure of WOx thin films deposited at different conditions was analyzed by STEM, XRD, RS. The thin films deposited at 300 and 400degreesC under 20Pa oxygen pressure showed nano-crystalline triclinic structure. The experimental results illustrate that the oxygen pressure and the deposition temperature are two important parameters for determining the structure and chemical composition of the synthesized thin films.
关键词	WO3 thin films nano-crystalline PLD technique structural analyses preparation conditions Si (111)
收录类别	SCI
语种	英语
WOS研究方向	Materials Science
WOS类目	Materials Science, Ceramics
WOS记录号	WOS:000174436700023
出版者	SCIENCE CHINA PRESS
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/114896
专题	中国科学院金属研究所
通讯作者	Fang, GJ
作者单位	1.Huazhong Univ Sci & Technol, Natl Lab Laser Technol, Wuhan 430074, Peoples R China 2.Huazhong Univ Sci & Technol, Dept Phys, Wuhan 430074, Peoples R China 3.Xiangfan Univ, Dept Phys, Xiangtan 441053, Peoples R China 4.Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110015, Peoples R China
推荐引用方式 GB/T 7714	Fang, GJ,Liu, ZL,Yao, KL. Preparation and structure of nano-crystalline WO3(Si) thin films by pulsed excimer laser deposition[J]. JOURNAL OF INORGANIC MATERIALS,2002,17(1):139-144.
APA	Fang, GJ,Liu, ZL,&Yao, KL.(2002).Preparation and structure of nano-crystalline WO3(Si) thin films by pulsed excimer laser deposition.JOURNAL OF INORGANIC MATERIALS,17(1),139-144.
MLA	Fang, GJ,et al."Preparation and structure of nano-crystalline WO3(Si) thin films by pulsed excimer laser deposition".JOURNAL OF INORGANIC MATERIALS 17.1(2002):139-144.