Si-induced twinning of TiC and formation of Ti3SiC2 platelets
Yu, R; Zhan, Q; He, LL; Zhou, YC; Ye, HQ
Corresponding AuthorYu, R()
Source PublicationACTA MATERIALIA
AbstractEffects of silicon in titanium carbide (TiC) have been investigated using high-resolution electron microscopy combined with high-spatial-resolution analytical electron microscopy. The results demonstrate that Si can reduce the twin boundary energy of TiC, leading to the formation of a lot of two-dimensional (2D) defects in TiC grains containing Si. These defects were identified as microtwins of four (111) spacings thick and structural-related Ti3SiC2 platelets of only one unit cell thick. The twin-stabilizing effect of Si is discussed in terms of coordination environments of Si. Very thin Ti3SiC2 platelets are formed, accompanied by the segregation of Si atoms and carbon vacancies to the twin boundaries. Microtwins and Ti3SiC2 platelets were found to grow in 2D with Si totally confined in the defects. (C) 2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.
Keywordcarbides transmission electron microscopy (TEM) microstructure phase transformations
Indexed BySCI
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000178317000013
Citation statistics
Cited Times:73[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Corresponding AuthorYu, R
AffiliationChinese Acad Sci, Met Res Inst, Shanyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Yu, R,Zhan, Q,He, LL,et al. Si-induced twinning of TiC and formation of Ti3SiC2 platelets[J]. ACTA MATERIALIA,2002,50(16):4127-4135.
APA Yu, R,Zhan, Q,He, LL,Zhou, YC,&Ye, HQ.(2002).Si-induced twinning of TiC and formation of Ti3SiC2 platelets.ACTA MATERIALIA,50(16),4127-4135.
MLA Yu, R,et al."Si-induced twinning of TiC and formation of Ti3SiC2 platelets".ACTA MATERIALIA 50.16(2002):4127-4135.
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