High temperature oxidation and hot corrosion behavior of Ti3SiC2-based materials
Sun, ZM; Zhou, YC
Corresponding AuthorSun, ZM()
AbstractThe high temperature oxidation behavior of Ti3SiC2 was studied from 900degreesC to 1200degreesC in air. The present results showed that scale growth obeyed a parabolic law below 1100degreesC, while above 1200degreesC it was a two-step parabolic law or linear law depending on the TiC content in Ti3SiC2. The oxide scale was generally composed of an outer layer of coarse-grained TiO2 (rutile) and an inner layer of fine-grained TiO2 and SiO2 (tridymite) above 1000degreesC. A discontinuous SiO2 "barrier" was observed within the outer coarse-grained TiO2 layer on the samples oxidized at 1100degreesC and 1200degreesC. The TiC content in Ti3SiC2 is deleterious to its oxidation resistance. Ti3SiC2 demonstrated good hot corrosion behavior beneath Na2SO4 coatings, while beneath 25wt.% NaCl + 75wt.% Na2SO4 coatings, it showed deleterious hot corrosion behavior, suggesting that the presence of NaCl accelerated the hot corrosion of Ti3SiC2 materials.
KeywordTi3SiC2 high temperature oxidation hot corrosion
Indexed BySCI
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Ceramics ; Materials Science, Composites
WOS IDWOS:000176367400167
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Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Corresponding AuthorSun, ZM
AffiliationChinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, High Performance Ceram Div, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Sun, ZM,Zhou, YC. High temperature oxidation and hot corrosion behavior of Ti3SiC2-based materials[J]. HIGH-PERFORMANCE CERAMICS 2001, PROCEEDINGS,2002,224-2:791-796.
APA Sun, ZM,&Zhou, YC.(2002).High temperature oxidation and hot corrosion behavior of Ti3SiC2-based materials.HIGH-PERFORMANCE CERAMICS 2001, PROCEEDINGS,224-2,791-796.
MLA Sun, ZM,et al."High temperature oxidation and hot corrosion behavior of Ti3SiC2-based materials".HIGH-PERFORMANCE CERAMICS 2001, PROCEEDINGS 224-2(2002):791-796.
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