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Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy
Dong, HW; Zhao, YW; Zeng, YP; Jiao, JH; Li, JM; Lin, LY
Corresponding AuthorDong, HW()
2003-04-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume250Issue:3-4Pages:364-369
AbstractTensile-strained InAlAs layers have been grown by solid-source molecular beam epitaxy on as-grown Fe-doped semi-insulating (SI) InP substrates and undoped SI InP substrates obtained by annealing undoped conductive InP wafers (wafer-annealed InP). The effect of the two substrates on InAlAs epilayers and InAlAs/InP type II heterostructures has been studied by using a variety of characterization techniques. Our calculation data proved that the out-diffusion of Fe atoms in InP substrate may not take place due to their low diffusion, coefficient. Double-crystal X-ray diffraction measurements show that the lattice mismatch between the InAlAs layers and the two substrates is different, which is originated from their different Fe concentrations. Furthermore, photoluminescence results indicate that the type II heterostructure grown on the wafer-annealed InP substrate exhibits better optical and interface properties than that grown on the as-grown Fe-doped substrate. We have also given a physically coherent explanation on the basis of these investigations. (C) 2003 Elsevier Science B.V. All rights reserved.
Keyworddiffusion interfaces substrates molecular beam epitaxy phosphides semiconducting indium phosphide
DOI10.1016/S0022-0248(02)02488-0
Indexed BySCI
Language英语
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000181517900015
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/116031
Collection中国科学院金属研究所
Corresponding AuthorDong, HW
AffiliationChinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Dong, HW,Zhao, YW,Zeng, YP,et al. Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2003,250(3-4):364-369.
APA Dong, HW,Zhao, YW,Zeng, YP,Jiao, JH,Li, JM,&Lin, LY.(2003).Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,250(3-4),364-369.
MLA Dong, HW,et al."Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 250.3-4(2003):364-369.
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