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Annealing and activation of silicon implanted in semi-insulating InP substrates
Dong, HW; Zhao, YW; Li, JM
Corresponding AuthorDong, HW()
2003-08-01
Source PublicationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN1369-8001
Volume6Issue:4Pages:215-218
AbstractWe have investigated the annealing and activation of silicon implanted in both as-grown Fe-doped semi-insulating (SI) InP substrate and undoped SI InP substrate obtained by annealing high purity conductive InP wafer (wafer-annealed). Si implantations were performed at an energy of 500 keV and a dose of 1 X 10(15) cm(-2). Following the implantations, rapid thermal annealing (RTA) cycles were carried out for 30 s at different temperatures. The results of Raman measurements show that for 700degreesC/30s RTA, the two Si-implanted SI InP substrates have acquired a high degree of lattice recovery and electrical activation. However, further Hall measurements indicate that the carrier concentration of the wafer-annealed SI InP substrate is about three times higher than that of the as-grown Fe-doped SI InP substrate. The difference can be ascribed to the low Fe concentration of the wafer-annealed SI InP substrate. These experimental data imply that the use of the wafer-annealed SI InP substrate can be conducive to the improvement of InP-based device performances. (C) 2003 Elsevier Ltd. All rights reserved.
Keywordsemi-insulating InP ion implantation silicon annealing activation
DOI10.1016/j.mssp.2003.08.002
Indexed BySCI
Language英语
WOS Research AreaEngineering ; Materials Science ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000187037700009
PublisherELSEVIER SCI LTD
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/116476
Collection中国科学院金属研究所
Corresponding AuthorDong, HW
Affiliation1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Dong, HW,Zhao, YW,Li, JM. Annealing and activation of silicon implanted in semi-insulating InP substrates[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2003,6(4):215-218.
APA Dong, HW,Zhao, YW,&Li, JM.(2003).Annealing and activation of silicon implanted in semi-insulating InP substrates.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,6(4),215-218.
MLA Dong, HW,et al."Annealing and activation of silicon implanted in semi-insulating InP substrates".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 6.4(2003):215-218.
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