Kinetics and mechanism of interfacial reaction in a SiCf/Ti composite

IMR OpenIR

	Kinetics and mechanism of interfacial reaction in a SiCf/Ti composite
	Zhang, GX; Kang, Q; Shi, NL; Li, GP; Li, D
通讯作者	Zhang, GX()
	2003-09-01
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	19 期号:5 页码:407-410
摘要	In order to evaluate the interfacial reaction, a SiCf/Ti (TA1) composite was fabricated by a vacuum hot pressing method and then heat-treated in vacuum at 800degreesC for up to 100 h. The elemental distributions of C, Si and Ti at the interfacial reaction zone were investigated. It was found that the reaction zone occurs during the fabrication process and continuously grows at high temperature because the Si and C atoms diffuse from SiC fibers to the matrix and Ti atoms diffuse in the opposite direction. The growth of the reaction zone is diffusion controlled and the mechanism of the reaction can be described by a reactive diffusion model of solid-state growth of an A(m)B(n) layer between two elementary substances A and B.
关键词	SiCf/Ti (TA1) composite interfacial reaction diffusion control
收录类别	SCI
语种	英语
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000185818700008
出版者	JOURNAL MATER SCI TECHNOL
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/116547
专题	中国科学院金属研究所
通讯作者	Zhang, GX
作者单位	Chinese Acad Sci, Met Res Inst, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Zhang, GX,Kang, Q,Shi, NL,et al. Kinetics and mechanism of interfacial reaction in a SiCf/Ti composite[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2003,19(5):407-410.
APA	Zhang, GX,Kang, Q,Shi, NL,Li, GP,&Li, D.(2003).Kinetics and mechanism of interfacial reaction in a SiCf/Ti composite.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,19(5),407-410.
MLA	Zhang, GX,et al."Kinetics and mechanism of interfacial reaction in a SiCf/Ti composite".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 19.5(2003):407-410.