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Laser direct writing of Ag films from solution on Si substrate
Sun, K; Zhang, CB; Zhao, Y
Corresponding AuthorZhao, Y(yanzhao@imr.ac.cn)
2003-11-01
Source PublicationJOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN1005-0302
Volume19Issue:6Pages:634-636
AbstractPulsed Nd:YAG laser was used to irradiate Si substrate immersed in AgNO3 ethylene glycol solution to deposit Ag films along the lines scanned by laser on the substrate, which is a photo-thermal decomposing process.. The decomposed Ag atoms congregate and form polycrystalline Ag particles. The Ag concentration changes greatly with the total laser energy absorbed by substrate. Transmission electron microscopy (TEM) observation shows the Ag particles are inlaid in the Si substrate. Auger electron spectrum (AES) shows that the Ag concentration decreases with the increase of the sputtering depth, and there is no oxygen element on the surface of the deposited Ag films.
Keywordpulsed Nd : YAG laser laser direct writing Ag deposited film Si substrate
Indexed BySCI
Language英语
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000188365400035
PublisherJOURNAL MATER SCI TECHNOL
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/116778
Collection中国科学院金属研究所
Corresponding AuthorZhao, Y
Affiliation1.Northeastern Univ, Sch Sci, Shenyang 110004, Peoples R China
2.Chinese Acad Sci, Met Res Inst, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Sun, K,Zhang, CB,Zhao, Y. Laser direct writing of Ag films from solution on Si substrate[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2003,19(6):634-636.
APA Sun, K,Zhang, CB,&Zhao, Y.(2003).Laser direct writing of Ag films from solution on Si substrate.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,19(6),634-636.
MLA Sun, K,et al."Laser direct writing of Ag films from solution on Si substrate".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 19.6(2003):634-636.
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