Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances

doi:10.1016/j.jcrysgro.2003.07.009

IMR OpenIR

	Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
	Dong, ZY; Zhao, YW; Zeng, YP; Duan, ML; Sun, WR; Jiao, JH; Lin, LY
通讯作者	Dong, ZY()
	2003-11-01
发表期刊	JOURNAL OF CRYSTAL GROWTH
ISSN	0022-0248
卷号	259 期号:1-2 页码:1-7
摘要	Microdefects originating from impurity-dislocation interactions in undoped InP that had been annealed in phosphorus and iron phosphide ambiances have been studied using optical microscopy. The electrical uniformity of the annealed wafer is improved by removing impurity aggregation around dislocations and by eliminating impurity striations in the annealing process. Compared to as-grown Fe-doped semi-insulating (SI) material, SI wafers obtained by annealing undoped InP in iron phosphide ambiances have better uniformity. This is attributed to the avoidance of Fe aggregation around dislocations and dislocation clusters, Fe precipitation and impurity striations, and is related to the use of a low concentration of Fe in the annealed material. The influence of Fe diffusion on the migration of dislocations in the annealing process has been studied and reviewed. (C) 2003 Elsevier B.V. All rights reserved.
关键词	annealing defects etching semiconducting indium phosphide
DOI	10.1016/j.jcrysgro.2003.07.009
收录类别	SCI
语种	英语
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000186123700001
出版者	ELSEVIER SCIENCE BV
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/116900
专题	中国科学院金属研究所
通讯作者	Dong, ZY
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Dong, ZY,Zhao, YW,Zeng, YP,et al. Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances[J]. JOURNAL OF CRYSTAL GROWTH,2003,259(1-2):1-7.
APA	Dong, ZY.,Zhao, YW.,Zeng, YP.,Duan, ML.,Sun, WR.,...&Lin, LY.(2003).Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances.JOURNAL OF CRYSTAL GROWTH,259(1-2),1-7.
MLA	Dong, ZY,et al."Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances".JOURNAL OF CRYSTAL GROWTH 259.1-2(2003):1-7.