Solid state reaction for magnetron sputtering Cu/Al multilayers
Wang, W; Lu, K
Corresponding AuthorWang, W()
AbstractCu/Al multilayers with atomic ratio of Cu:Al=2:1 and bilayer thickness (A) of 20 nm and 5 nm have been prepared by using magnetron sputtering technique. The solid state reaction of these multilayers were investigated by using XRD, TEM and DSC measurements. The Cu and Al layered films grow preferably along <111> direction for A=20 nm multilayers. Solid solution alpha-Cu is formed at low annealing temperature during the initial reaction. With increasing annealing temperature up to 191 degreesC, gamma(2)-Cu9Al4 phase is formed. For as-deposited A=5 nm film, the presence of alpha-Cu at interface during deposition results in a pronounced reduction of temperature for gamma(2)-Cu9Al4 formation. The activation energies of formation of alpha-Cu and gamma(2)-Cu9Al4 in the A=20 nm multilayers were measured to be 0.56+/-0.03 eV and 0.79+/-0.08 eV, respectively, the later agrees with the literature data.
Keywordmagnetron sputtering Cu/Al multilayer solid state reaction
Indexed BySCI
WOS Research AreaMetallurgy & Metallurgical Engineering
WOS SubjectMetallurgy & Metallurgical Engineering
WOS IDWOS:000180699100001
Citation statistics
Cited Times:29[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Corresponding AuthorWang, W
AffiliationChinese Acad Sci, Met Res Inst, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Wang, W,Lu, K. Solid state reaction for magnetron sputtering Cu/Al multilayers[J]. ACTA METALLURGICA SINICA,2003,39(1):1-4.
APA Wang, W,&Lu, K.(2003).Solid state reaction for magnetron sputtering Cu/Al multilayers.ACTA METALLURGICA SINICA,39(1),1-4.
MLA Wang, W,et al."Solid state reaction for magnetron sputtering Cu/Al multilayers".ACTA METALLURGICA SINICA 39.1(2003):1-4.
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