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Effects of annealing ambient on the formation of compensation defects in InP
Deng, AH; Mascher, P; Zhao, YW; Lin, LY
Corresponding AuthorDeng, AH()
2003-01-15
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume93Issue:2Pages:930-932
AbstractPositron annihilation lifetime (PAL) and photoinduced current transient spectroscopies (PICTS) have been employed to study the formation of compensation defects in undoped InP under different annealing processes with pure phosphorus (PP) ambience and iron phosphide (IP) ambience, respectively. The different annealing ambiences convert the as-grown n-type undoped InP into two types of semi-insulating (SI) states. The positron average lifetimes of as-grown InP, PP SI-InP, and IP SI-InP are found to be 246, 251, and 243 ps, respectively, which are all longer than the bulk lifetime of 240 ps, indicating the existence of vacancy-type positron-trapping defects. For as-grown InP, VInH4 complexes are the dominant defects. They dissociate into VInHn(0less than or equal tonless than or equal to3) acceptor vacancies under PP ambience annealing, compensating the residual shallow donors and turning the material semi-insulating. In forming IP SI-InP, diffusion of iron into V-In complexes under IP ambience annealing produces the substitutional compensation defect Fe-In, causing a shorter positron average lifetime. The PICTS measurements show that a group of vacancy-type defects has been suppressed by iron diffusion during the annealing process, which is in good agreement with the PAL results. (C) 2003 American Institute of Physics.
DOI10.1063/1.1531230
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000180134200020
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:15[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/118017
Collection中国科学院金属研究所
Corresponding AuthorDeng, AH
Affiliation1.Sichuan Univ, Dept Appl Phys, Sichuan 610065, Peoples R China
2.McMaster Univ, Dept Engn Phys, Ctr Electrophoton Mat & Devices, Hamilton, ON L8S 4L7, Canada
3.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Deng, AH,Mascher, P,Zhao, YW,et al. Effects of annealing ambient on the formation of compensation defects in InP[J]. JOURNAL OF APPLIED PHYSICS,2003,93(2):930-932.
APA Deng, AH,Mascher, P,Zhao, YW,&Lin, LY.(2003).Effects of annealing ambient on the formation of compensation defects in InP.JOURNAL OF APPLIED PHYSICS,93(2),930-932.
MLA Deng, AH,et al."Effects of annealing ambient on the formation of compensation defects in InP".JOURNAL OF APPLIED PHYSICS 93.2(2003):930-932.
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