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Study of Al-O-N and Cr-O-N films deposited by arc ion plating as diffusion barriers
Wang, QM; Wu, YN; Ji, AL; Ke, PL; Sun, C; Huang, RF; Wen, LS
通讯作者Wang, QM(qmwang@imr.ac.cn)
2004
发表期刊ACTA METALLURGICA SINICA
ISSN0412-1961
卷号40期号:1页码:83-87
摘要Al-O-N and Cr-O-N thin films were deposited on superalloy DSM11 by arc ion plating (AIP). The effects of flow rates of oxygen and nitrogen on phase composition and the interdiffusion of various elements at high temperature between DSM11 substrate and NiCoCrAlY coating were studied in the systems of DSM11/NiCoCrAlY, DSM11/Al-O-N/NiCoCrAlY and DSM11/Cr-O-N/NiCoCrAlY. The results indicate that the Al(Cr)-O-N films are polycrystalline with phase constitution of alpha-Al2O3 + hexagonal AIN or Cr2O3+CrN, respectively. The relative intensity of AIN to Al2O3 or CrN to Cr2O3 is changed with the change of flow rates of oxygen and nitrogen. After oxidation at 1050 degreesC for 100 h, Al-O-N hindered the interdiffusion of elements between DSM11 and NiCoCrAlY more effectively than Cr-O-N film. The diffusion barrier layers hardly influenced the oxidation kinetics of the NiCoCrAlY coating.
关键词Al-O-N Cr-O-N diffusion barrier layer arc ion plating (AIP)
收录类别SCI
语种英语
WOS研究方向Metallurgy & Metallurgical Engineering
WOS类目Metallurgy & Metallurgical Engineering
WOS记录号WOS:000189379800016
出版者SCIENCE CHINA PRESS
引用统计
被引频次:9[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/118541
专题中国科学院金属研究所
通讯作者Wang, QM
作者单位Chinese Acad Sci, Inst Met Res, State Key Lab Corros & Protect, Shenyang 110016, Peoples R China
推荐引用方式
GB/T 7714
Wang, QM,Wu, YN,Ji, AL,et al. Study of Al-O-N and Cr-O-N films deposited by arc ion plating as diffusion barriers[J]. ACTA METALLURGICA SINICA,2004,40(1):83-87.
APA Wang, QM.,Wu, YN.,Ji, AL.,Ke, PL.,Sun, C.,...&Wen, LS.(2004).Study of Al-O-N and Cr-O-N films deposited by arc ion plating as diffusion barriers.ACTA METALLURGICA SINICA,40(1),83-87.
MLA Wang, QM,et al."Study of Al-O-N and Cr-O-N films deposited by arc ion plating as diffusion barriers".ACTA METALLURGICA SINICA 40.1(2004):83-87.
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