All-Carbon Thin-Film Transistors as a Step Towards Flexible and Transparent Electronics

doi:10.1002/aelm.201600229

IMR OpenIR

	All-Carbon Thin-Film Transistors as a Step Towards Flexible and Transparent Electronics
	Sun, Dong-Ming 1,2; Liu, Chang 1,2; Ren, Wen-Cai 1,2; Cheng, Hui-Ming 1,2,3
通讯作者	Sun, Dong-Ming(dmsun@imr.ac.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn)
	2016-11-01
发表期刊	Advanced Electronic Materials
ISSN	2199-160X
卷号	2 期号:11 页码:22
摘要	Carbon nanotubes and graphene have attracted great attention for potential applications in flexible and transparent electronics, owing to their exceptional properties including very high electrical conductivity, optical transmittance, mechanical strength and flexibility. Thin films of carbon nanotubes or graphene are promising for fabricating high-quality semiconducting channels and transparent conductive films, as electrodes and interconnects in thin-film transistors and integrated circuits, which allows the construction of all-carbon electronics. This article reviews the main approaches to and important findings in the fabrication of flexible and transparent electrodes and channels for thin-film transistors, and highlights recent achievements of flexible and transparent all-carbon thin-film transistors, in terms of design, fabrication and performance evaluation. This all-carbon strategy opens up a way to achieve extremely flexible, transparent and stretchable electronics with relatively low cost and fast fabrication techniques, compared to the traditional rigid silicon, metal and metal oxide electronics.
资助者	Ministry of Science and Technology of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences ; CAS/SAFEA International Partnership Program for Creative Research Teams ; Thousand Talent Program for Young Outstanding Scientists ; Liaoning BaiQianWan Talents Program ; EU-JST joint project IRENA
DOI	10.1002/aelm.201600229
收录类别	SCI
语种	英语
资助项目	Ministry of Science and Technology of China[2016YFA0200101] ; Ministry of Science and Technology of China[2016YFB04001100] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51532008] ; National Natural Science Foundation of China[51572264] ; National Natural Science Foundation of China[51272256] ; National Natural Science Foundation of China[61422406] ; National Natural Science Foundation of China[51272257] ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[61574143] ; National Natural Science Foundation of China[51372254] ; Chinese Academy of Sciences[KGZD-EW-T06] ; CAS/SAFEA International Partnership Program for Creative Research Teams ; Thousand Talent Program for Young Outstanding Scientists ; Liaoning BaiQianWan Talents Program ; EU-JST joint project IRENA
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000392938400004
出版者	WILEY-BLACKWELL
引用统计	被引频次：35[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/123702
专题	中国科学院金属研究所
通讯作者	Sun, Dong-Ming; Cheng, Hui-Ming
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Peoples R China 3.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, 1001 Xueyuan Rd, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Sun, Dong-Ming,Liu, Chang,Ren, Wen-Cai,et al. All-Carbon Thin-Film Transistors as a Step Towards Flexible and Transparent Electronics[J]. Advanced Electronic Materials,2016,2(11):22.
APA	Sun, Dong-Ming,Liu, Chang,Ren, Wen-Cai,&Cheng, Hui-Ming.(2016).All-Carbon Thin-Film Transistors as a Step Towards Flexible and Transparent Electronics.Advanced Electronic Materials,2(11),22.
MLA	Sun, Dong-Ming,et al."All-Carbon Thin-Film Transistors as a Step Towards Flexible and Transparent Electronics".Advanced Electronic Materials 2.11(2016):22.