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All-Carbon Thin-Film Transistors as a Step Towards Flexible and Transparent Electronics
Sun, Dong-Ming1,2; Liu, Chang1,2; Ren, Wen-Cai1,2; Cheng, Hui-Ming1,2,3
Corresponding AuthorSun, Dong-Ming(dmsun@imr.ac.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn)
2016-11-01
Source PublicationAdvanced Electronic Materials
ISSN2199-160X
Volume2Issue:11Pages:22
AbstractCarbon nanotubes and graphene have attracted great attention for potential applications in flexible and transparent electronics, owing to their exceptional properties including very high electrical conductivity, optical transmittance, mechanical strength and flexibility. Thin films of carbon nanotubes or graphene are promising for fabricating high-quality semiconducting channels and transparent conductive films, as electrodes and interconnects in thin-film transistors and integrated circuits, which allows the construction of all-carbon electronics. This article reviews the main approaches to and important findings in the fabrication of flexible and transparent electrodes and channels for thin-film transistors, and highlights recent achievements of flexible and transparent all-carbon thin-film transistors, in terms of design, fabrication and performance evaluation. This all-carbon strategy opens up a way to achieve extremely flexible, transparent and stretchable electronics with relatively low cost and fast fabrication techniques, compared to the traditional rigid silicon, metal and metal oxide electronics.
Funding OrganizationMinistry of Science and Technology of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences ; CAS/SAFEA International Partnership Program for Creative Research Teams ; Thousand Talent Program for Young Outstanding Scientists ; Liaoning BaiQianWan Talents Program ; EU-JST joint project IRENA
DOI10.1002/aelm.201600229
Indexed BySCI
Language英语
Funding ProjectMinistry of Science and Technology of China[2016YFA0200101] ; Ministry of Science and Technology of China[2016YFB04001100] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51532008] ; National Natural Science Foundation of China[51572264] ; National Natural Science Foundation of China[51272256] ; National Natural Science Foundation of China[61422406] ; National Natural Science Foundation of China[51272257] ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[61574143] ; National Natural Science Foundation of China[51372254] ; Chinese Academy of Sciences[KGZD-EW-T06] ; CAS/SAFEA International Partnership Program for Creative Research Teams ; Thousand Talent Program for Young Outstanding Scientists ; Liaoning BaiQianWan Talents Program ; EU-JST joint project IRENA
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000392938400004
PublisherWILEY-BLACKWELL
Citation statistics
Cited Times:28[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/123705
Collection中国科学院金属研究所
Corresponding AuthorSun, Dong-Ming; Cheng, Hui-Ming
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, 96 Jinzhai Rd, Hefei 230026, Peoples R China
3.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, 1001 Xueyuan Rd, Shenzhen 518055, Peoples R China
Recommended Citation
GB/T 7714
Sun, Dong-Ming,Liu, Chang,Ren, Wen-Cai,et al. All-Carbon Thin-Film Transistors as a Step Towards Flexible and Transparent Electronics[J]. Advanced Electronic Materials,2016,2(11):22.
APA Sun, Dong-Ming,Liu, Chang,Ren, Wen-Cai,&Cheng, Hui-Ming.(2016).All-Carbon Thin-Film Transistors as a Step Towards Flexible and Transparent Electronics.Advanced Electronic Materials,2(11),22.
MLA Sun, Dong-Ming,et al."All-Carbon Thin-Film Transistors as a Step Towards Flexible and Transparent Electronics".Advanced Electronic Materials 2.11(2016):22.
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