IMR OpenIR
Microvia Filling by Copper Electroplating Using a Modified Safranine T as a Leveler
Zhu, H. P.1; Zhu, Q. S.1; Zhang, X.1; Liu, C. Z.2; Wang, J. J.2
Corresponding AuthorZhu, Q. S.(qszhu@imr.ac.cn) ; Liu, C. Z.(czliu@sau.edu.cn)
2017
Source PublicationJOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN0013-4651
Volume164Issue:9Pages:D645-D651
AbstractIn this study, a modified Safranine T (mST) was used as a leveler in Cu electroplating for blind microvia filling. A perfect super-conformal filling effect was achieved by a combination of additives: polyethlene glycol (PEG), bis (3-sulfopropyl) disuldide (SPS) and mST. The filling time of the PEG-mST-SPS electrolyte was only half as long as that of the conventional PEG-JGB-SPS and the deposition thickness on the surface was one-tenth of that of the PEG-JGB-SPS. By electrochemical analysis, it was found that the composite suppressor of PEG-mST had a much stronger adsorption competitiveness against SPS on the surface, but a much weaker competitiveness against SPS at the microvia bottom. Based on that, it was deduced that the PEG-mST would occupy the most of the locations on the surface and the SPS would occupy the most of locations at the microvia bottom, which might account for such a perfect bottom-up filling mode, an ultra-thin surface thickness and an ultra-fast filling speed. But it brought about a risk of overfilling bump phenomenon under high mST concentration and strong convection force. This study proposes that the modified hydroxy in mST molecular structure might play a key role in this filling performance. (C) 2017 The Electrochemical Society. All rights reserved.
DOI10.1149/2.0111712jes
Indexed BySCI
Language英语
WOS Research AreaElectrochemistry ; Materials Science
WOS SubjectElectrochemistry ; Materials Science, Coatings & Films
WOS IDWOS:000413256400185
PublisherELECTROCHEMICAL SOC INC
Citation statistics
Cited Times:14[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/125277
Collection中国科学院金属研究所
Corresponding AuthorZhu, Q. S.; Liu, C. Z.
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
2.Shenyang Aerosp Univ, Coll Mat Sci & Engn, Shenyang 110136, Liaoning, Peoples R China
Recommended Citation
GB/T 7714
Zhu, H. P.,Zhu, Q. S.,Zhang, X.,et al. Microvia Filling by Copper Electroplating Using a Modified Safranine T as a Leveler[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2017,164(9):D645-D651.
APA Zhu, H. P.,Zhu, Q. S.,Zhang, X.,Liu, C. Z.,&Wang, J. J..(2017).Microvia Filling by Copper Electroplating Using a Modified Safranine T as a Leveler.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,164(9),D645-D651.
MLA Zhu, H. P.,et al."Microvia Filling by Copper Electroplating Using a Modified Safranine T as a Leveler".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 164.9(2017):D645-D651.
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