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A simple and efficient criterion for ready screening of potential topological insulators
Cao, Guohua1,2; Liu, Huijun1,2; Chen, Xing-Qiu3; Sun, Yan3; Liang, Jinghua1,2; Yu, Rui1,2; Zhang, Zhenyu4,5
Corresponding AuthorLiu, Huijun(phlhj@whu.edu.cn) ; Chen, Xing-Qiu(xingqiu.chen@imr.ac.cn) ; Zhang, Zhenyu(zhangzy@ustc.edu.cn)
2017-12-30
Source PublicationSCIENCE BULLETIN
ISSN2095-9273
Volume62Issue:24Pages:1649-1653
AbstractTopological materials are a new and rapidly expanding class of quantum matter. To date, identification of the topological nature of a given compound material demands specific determination of the appropriate topological invariant through detailed electronic structure calculations. Here we present an efficient criterion that allows ready screening of potential topological materials, using topological insulators as prototypical examples. The criterion is inherently tied to the band inversion induced by spin-orbit coupling, and is uniquely defined by a minimal number of two elemental physical properties of the constituent elements: the atomic number and Pauling electronegativity. The validity and predictive power of the criterion is demonstrated by rationalizing many known topological insulators and potential candidates in the tetradymite and half-Heusler families, and the underlying design principle is naturally also extendable to predictive discoveries of other classes of topological materials. (C) 2017 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
KeywordTopological insulators Band inversion Spin-orbit coupling Predictive design
Funding OrganizationNational Natural Science Foundation of China ; National Science Fund for Distinguished Young Scholars
DOI10.1016/j.scib.2017.11.016
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[11574236] ; National Natural Science Foundation of China[51671193] ; National Natural Science Foundation of China[61434002] ; National Science Fund for Distinguished Young Scholars[51725103]
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
WOS IDWOS:000418893800010
PublisherSCIENCE PRESS
Citation statistics
Cited Times:8[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/127132
Collection中国科学院金属研究所
Corresponding AuthorLiu, Huijun; Chen, Xing-Qiu; Zhang, Zhenyu
Affiliation1.Wuhan Univ, Minist Educ, Key Lab Artificial Micro & Nanostruct, Wuhan 430072, Hubei, Peoples R China
2.Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China
3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
4.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Int Ctr Quantum Design Funct Mat ICQD, Hefei 230026, Anhui, Peoples R China
5.Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China
Recommended Citation
GB/T 7714
Cao, Guohua,Liu, Huijun,Chen, Xing-Qiu,et al. A simple and efficient criterion for ready screening of potential topological insulators[J]. SCIENCE BULLETIN,2017,62(24):1649-1653.
APA Cao, Guohua.,Liu, Huijun.,Chen, Xing-Qiu.,Sun, Yan.,Liang, Jinghua.,...&Zhang, Zhenyu.(2017).A simple and efficient criterion for ready screening of potential topological insulators.SCIENCE BULLETIN,62(24),1649-1653.
MLA Cao, Guohua,et al."A simple and efficient criterion for ready screening of potential topological insulators".SCIENCE BULLETIN 62.24(2017):1649-1653.
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