Enhanced doping effect on tuning structural phases of monolayer antimony

doi:10.1063/1.5028265

IMR OpenIR

	Enhanced doping effect on tuning structural phases of monolayer antimony
	Wang, Jizhang 1,2,3,4; Yang, Teng 3; Zhang, Zhidong 3; Yang, Li 1,2
通讯作者	Yang, Teng(yangteng@imr.ac.cn) ; Yang, Li(lyang@physics.wustl.edu)
	2018-05-21
发表期刊	APPLIED PHYSICS LETTERS
ISSN	0003-6951
卷号	112 期号:21 页码:5
摘要	Doping is capable to control the atomistic structure, electronic structure, and even to dynamically realize a semiconductor-metal transition in two-dimensional (2D) transition metal dichalcogenides (TMDs). However, the high critical doping density (similar to 10(14) electron/cm(2)), compound nature, and relatively low carrier mobility of TMDs limits broader applications. Using first-principles calculations, we predict that, via a small transition potential, a substantially lower hole doping density (similar to 6 x 10(12) hole/cm(2)) can switch the ground-state structure of monolayer antimony from the hexagonal beta-phase, a 2D semiconductor with excellent transport performance and air stability but an indirect bandgap, to the orthorhombic alpha phase with a direct bandgap and potentially better carrier mobility. We further show that this structural engineering can be achieved by the established electrostatic doping, surface functional adsorption, or directly using graphene substrate. This gives hope to dynamically tuning and large-scale production of 2D single-element semiconductors that simultaneously exhibit remarkable transport and optical performance. Published by AIP Publishing.
资助者	National Science Foundation (NSF) CAREER Grant ; NSF ; National Key R&D Program of China ; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC and CASC, China ; outstanding students international exchange program of University of Science and Technology of China (USTC) ; China Scholarship Council
DOI	10.1063/1.5028265
收录类别	SCI
语种	英语
资助项目	National Science Foundation (NSF) CAREER Grant[DMR-1455346] ; NSF[EFRI-2DARE-1542815] ; National Key R&D Program of China[2017YFA0206301] ; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC and CASC, China[U1537204] ; outstanding students international exchange program of University of Science and Technology of China (USTC) ; China Scholarship Council
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000433140900028
出版者	AMER INST PHYSICS
引用统计	被引频次：14[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/128284
专题	中国科学院金属研究所
通讯作者	Yang, Teng; Yang, Li
作者单位	1.Washington Univ, Dept Phys, St Louis, MO 63136 USA 2.Washington Univ, Inst Mat Sci & Engn, St Louis, MO 63136 USA 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 4.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China
推荐引用方式 GB/T 7714	Wang, Jizhang,Yang, Teng,Zhang, Zhidong,et al. Enhanced doping effect on tuning structural phases of monolayer antimony[J]. APPLIED PHYSICS LETTERS,2018,112(21):5.
APA	Wang, Jizhang,Yang, Teng,Zhang, Zhidong,&Yang, Li.(2018).Enhanced doping effect on tuning structural phases of monolayer antimony.APPLIED PHYSICS LETTERS,112(21),5.
MLA	Wang, Jizhang,et al."Enhanced doping effect on tuning structural phases of monolayer antimony".APPLIED PHYSICS LETTERS 112.21(2018):5.