Materials, processing and reliability of low temperature bonding in 3D chip stacking

IMR OpenIR

	Materials, processing and reliability of low temperature bonding in 3D chip stacking
	Zhang, Liang 1,2; Liu, Zhi-quan 2; Chen, Sinn-Wen 3; Wang, Yao-dong 4; Long, Wei-Min 5; Guo, Yong-huan 1; Wang, Song-quan 1; Ye, Guo 1; Liu, Wen-yi 1
通讯作者	Zhang, Liang(zhangliang@jsnu.edu.cn)
	2018-06-25
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS
ISSN	0925-8388
卷号	750 页码:980-995
摘要	Due to the advantages of small form factor, high performance, low power consumption, and high density integration, three-dimensional integrated circuits (3D ICs) have been generally acknowledged as the next generation semiconductor technology. Low temperature bonding is the key technology to ensure the chip (or wafer) stacking in 3D ICs. In this paper, different low temperature bonding methods for chip (or wafer) stacking were reviewed and described systematically. Materials, processing and reliability will be extremely important, their effects on the 3D IC structure were addressed in detail, the challenging reliability issues may be considered as the major concern in the future work. The latest development of low temperature bonding in 3D ICs is also given here, which helpful may provide a reference for the further study of low temperature bonding. (C) 2018 Elsevier B.V. All rights reserved.
关键词	3D IC Low temperature bonding Bonding method Reliability
资助者	Natural Science Foundation of China ; Qing Lan Project ; China Postdoctoral Science Foundation ; Six talent peaks project in Jiangsu Province ; International Cooperation Project ; Major State Research Development Program of China ; Doctor Talent Project of Jiangsu Normal University
收录类别	SCI
语种	英语
资助项目	Natural Science Foundation of China[51475220] ; Qing Lan Project ; China Postdoctoral Science Foundation[2016M591464] ; Six talent peaks project in Jiangsu Province[XCL-022] ; International Cooperation Project[2015DFA50470] ; Major State Research Development Program of China[2017YFB0305500] ; Doctor Talent Project of Jiangsu Normal University[14XLR025]
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000432668500118
出版者	ELSEVIER SCIENCE SA
引用统计	被引频次：78[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/128361
专题	中国科学院金属研究所
通讯作者	Zhang, Liang
作者单位	1.Jiangsu Normal Univ, Sch Mechatron Engn, Xuzhou 221116, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 3.Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu, Taiwan 4.Intel Corp, 5000W Chandler Blvd, Phoenix, AZ 85226 USA 5.Zhengzhou Res Inst Mech Engn, State Key Lab Adv Brazing Filler Met & Technol, Zhengzhou 450001, Henan, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Liang,Liu, Zhi-quan,Chen, Sinn-Wen,et al. Materials, processing and reliability of low temperature bonding in 3D chip stacking[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2018,750:980-995.
APA	Zhang, Liang.,Liu, Zhi-quan.,Chen, Sinn-Wen.,Wang, Yao-dong.,Long, Wei-Min.,...&Liu, Wen-yi.(2018).Materials, processing and reliability of low temperature bonding in 3D chip stacking.JOURNAL OF ALLOYS AND COMPOUNDS,750,980-995.
MLA	Zhang, Liang,et al."Materials, processing and reliability of low temperature bonding in 3D chip stacking".JOURNAL OF ALLOYS AND COMPOUNDS 750(2018):980-995.