| Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3 | |
| Xue, Fei1,2; Zhang, Junwei1; Hu, Weijin3; Hsu, Wei-Ting4; Han, Ali1; Leung, Siu-Fung5; Huang, Jing-Kai1; Wan, Yi1; Liu, Shuhai6; Zhang, Junli1; He, Jr-Hau; Chang, Wen-Hao4; Wang, Zhong Lin2,7; Zhang, Xixiang1; Li, Lain-Jong1,8 | |
| 通讯作者 | Zhang, Xixiang(xixiang.zhang@kaust.edu.sa) ; Li, Lain-Jong(ljliv@tsmc.com) |
| 2018-05-01 | |
| 发表期刊 | ACS NANO
 |
| ISSN | 1936-0851 |
| 卷号 | 12期号:5页码:4976-4983 |
| 摘要 | Piezoelectric materials have been widely used for sensors, actuators, electronics, and energy conversion. Two-dimensional (2D) ultrathin semiconductors, such as monolayer h-BN and MoS2 with their atom-level geometry, are currently emerging as new and attractive members of the piezoelectric family. However, their piezoelectric polarization is commonly limited to the in-plane direction of odd-number ultrathin layers, largely restricting their application in integrated nanoelectromechanical systems. Recently, theoretical calculations have predicted the existence of out-of-plane and in-plane piezoelectricity in monolayer alpha-In2Se3. Here, we experimentally report the coexistence of out-of-plane and in-plane piezoelectricity in monolayer to bulk alpha-In2Se3, attributed to their noncentrosymmetry originating from the hexagonal stacking. Specifically, the corresponding d(33) piezoelectric coefficient of alpha-In2Se3 increases from 0.34 pm/V (monolayer) to 5.6 pm/V (bulk) without any odd even effect. In addition, we also demonstrate a type of alpha-In2Se3-based flexible piezoelectric nanogenerator as an energy-harvesting cell and electronic skin. The out-of-plane and in-plane piezoelectricity in alpha-In2Se3 flakes offers an opportunity to enable both directional and nondirectional piezoelectric devices to be applicable for self-powered systems and adaptive and strain tunable electronics/optoelectronics. |
| 关键词 | multidirection piezoelectricity van der Waals crystal monolayer and bulk nanogenerator and electronic skin |
| 资助者 | KAUST |
| DOI | 10.1021/acsnano.8b02152 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 资助项目 | KAUST |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS记录号 | WOS:000433404500098 |
| 出版者 | AMER CHEMICAL SOC |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.imr.ac.cn/handle/321006/128445 |
| 专题 | 中国科学院金属研究所 |
| 通讯作者 | Zhang, Xixiang; Li, Lain-Jong |
| 作者单位 | 1.King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia 2.Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 10083, Peoples R China 3.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, IMR, Shenyang 110016, Liaoning, Peoples R China 4.Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan 5.King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn Div, Thuwal 239556900, Saudi Arabia 6.Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Shaanxi, Peoples R China 7.Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA 8.TSMC, Corporate Res & Chief Technol Off, Hsinchu 30075, Taiwan |
| 推荐引用方式 GB/T 7714 | Xue, Fei,Zhang, Junwei,Hu, Weijin,et al. Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3[J]. ACS NANO,2018,12(5):4976-4983. |
| APA | Xue, Fei.,Zhang, Junwei.,Hu, Weijin.,Hsu, Wei-Ting.,Han, Ali.,...&Li, Lain-Jong.(2018).Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3.ACS NANO,12(5),4976-4983. |
| MLA | Xue, Fei,et al."Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal alpha-In2Se3".ACS NANO 12.5(2018):4976-4983. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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