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Effect of Reverse Pulse on Additives Adsorption and Copper Filling for Through Silicon Via
Zhu, Q. S.1; Zhang, X.1; Liu, C. Z.2; Liu, H. Y.3
Corresponding AuthorZhu, Q. S.(qszhu@imr.ac.cu) ; Zhang, X.(xzhang14s@imr.ac.cn) ; Liu, C. Z.(czliu@sau.edu.cn)
2018-08-07
Source PublicationJOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN0013-4651
Volume166Issue:1Pages:D3006-D3012
AbstractIn order to develop the suitable Cu electrolyte for TSV filling using period pulse reverse (PPR) electroplating, the operating mechanism of reverse pulse on the adsorption of additives within TSV was systematically investigated. Whether the promotion or reduction of the adsorption of polyethylene glycol (PEG), bis (sodiumsulfopropyl) disulfide (SPS) and Janus Green B (JGB) by reverse pulse was determined by the charge of the formed complex of this additive with Cu+ and Cl-. The charge of formed complex was dependent on the Cl- concentration. The reverse pulse had no significant effect on the adsorption of single JGB. In comparison, the composite JGB-PEG inhibitor could be repelled by reverse pulse at the microvia bottom. For the composite PEG-SPS or PEG-JGB-SPS, since the preferentially adsorbed Cu+-Cl--PEG dense layer could effectively block the transportation of Cl- , few sites of Cl- were left for the SPS adsorption and then mainly formed positively charged SPS-Cu+, which accounted for the detachment of SPS by anodic pulse current at microvia entrance in the presence of PEG. Based on the change of the additives coverage surface by reverse pulse, the microvia filling performances in PPR plating compared to those in DC plating could be well explained. (C) The Author(s) 2018. Published by ECS.
Funding OrganizationNational Natural Science Foundation of China (NSFC) ; Science and Technology Program of Shenyang
DOI10.1149/2.0021901jes
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China (NSFC)[51471180] ; Science and Technology Program of Shenyang[F16-205-1-18]
WOS Research AreaElectrochemistry ; Materials Science
WOS SubjectElectrochemistry ; Materials Science, Coatings & Films
WOS IDWOS:000441159200002
PublisherELECTROCHEMICAL SOC INC
Citation statistics
Cited Times:10[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/128812
Collection中国科学院金属研究所
Corresponding AuthorZhu, Q. S.; Zhang, X.; Liu, C. Z.
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China
2.Shenyang Aerosp Univ, Coll Mat Sci & Engn, Shenyang 110136, Liaoning, Peoples R China
3.Natl Ctr Adv Packaging Co Ltd, NCAP China, Wuxi 214135, Peoples R China
Recommended Citation
GB/T 7714
Zhu, Q. S.,Zhang, X.,Liu, C. Z.,et al. Effect of Reverse Pulse on Additives Adsorption and Copper Filling for Through Silicon Via[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2018,166(1):D3006-D3012.
APA Zhu, Q. S.,Zhang, X.,Liu, C. Z.,&Liu, H. Y..(2018).Effect of Reverse Pulse on Additives Adsorption and Copper Filling for Through Silicon Via.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,166(1),D3006-D3012.
MLA Zhu, Q. S.,et al."Effect of Reverse Pulse on Additives Adsorption and Copper Filling for Through Silicon Via".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 166.1(2018):D3006-D3012.
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