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Tetramethysilane-assisted enhancement of diamond nucleation on silicon substrate
Yi, Yong1; Xiong, Ying1,2; Zhuang, Hao2; Yang, Bing3; Wang, Bing1; Jiang, Xin2,3
Corresponding AuthorXiong, Ying(xiongying@swust.edu.cn) ; Jiang, Xin()
2018-09-15
Source PublicationSURFACE & COATINGS TECHNOLOGY
ISSN0257-8972
Volume349Pages:959-962
AbstractThis paper describes the effect of tetramethylsilane (TMS) on diamond nucleation on Si substrate under an applied bias voltage of 120 V, performed in a modified microwave plasma chemical vapor deposition (MPCVD) reactor. The introduction of TMS in the CH4/H-2 plasma leads to a significant enhancement of nucleation density of diamond nuclei, namely from (3.7 +/- 0.2) x 10(7)/cm(2) without the introduction of TMS to (4.7 +/- 0.5) x 10(10)/cm(2) at the TMS flow rate of 4 sccm. On the contrary, further increasing in the TMS flow rate to 8 sccm slightly reduces the nucleation density of diamond nuclei to (2.1 +/- 0.3) x 10(10)/cm(2), along with the increase in average size of diamond nuclei. High-resolution transmission electron microscopy (HRTEM) and Xray photoelectron spectroscopy (XPS) allow us to study the microstructural and chemical composition evolution of Si/diamond interface. The obtained results suggest that bias-enhanced nucleation of diamond on Si substrate exhibits a direct relationship with the TMS flow rate.
KeywordBias-enhanced nucleation Tetramethylsilane Diamond nuclei Nucleation behavior HRTEM
Funding OrganizationNational Natural Science Foundation of China ; German Research Foundation (DGF)
DOI10.1016/j.surfcoat.2018.06.087
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51522229] ; National Natural Science Foundation of China[1120512] ; German Research Foundation (DGF)[JI 22/24-1]
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Coatings & Films ; Physics, Applied
WOS IDWOS:000441492600100
PublisherELSEVIER SCIENCE SA
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/129099
Collection中国科学院金属研究所
Corresponding AuthorXiong, Ying; Jiang, Xin
Affiliation1.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Peoples R China
2.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany
3.Chinese Acad Sci, IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China
Recommended Citation
GB/T 7714
Yi, Yong,Xiong, Ying,Zhuang, Hao,et al. Tetramethysilane-assisted enhancement of diamond nucleation on silicon substrate[J]. SURFACE & COATINGS TECHNOLOGY,2018,349:959-962.
APA Yi, Yong,Xiong, Ying,Zhuang, Hao,Yang, Bing,Wang, Bing,&Jiang, Xin.(2018).Tetramethysilane-assisted enhancement of diamond nucleation on silicon substrate.SURFACE & COATINGS TECHNOLOGY,349,959-962.
MLA Yi, Yong,et al."Tetramethysilane-assisted enhancement of diamond nucleation on silicon substrate".SURFACE & COATINGS TECHNOLOGY 349(2018):959-962.
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