Communication-Electrodeposition of Nano-Twinned Cu in Void-Free Filling for Blind Microvia of High Density Interconnect

doi:10.1149/2.0131901jes

IMR OpenIR

	Communication-Electrodeposition of Nano-Twinned Cu in Void-Free Filling for Blind Microvia of High Density Interconnect
	Zhu, Qingsheng 1; Zhang, Xian 1; Li, Sujie 1; Liu, Chunzhong 2; Li, Cai-Fu 3
通讯作者	Zhu, Qingsheng(qszhu@mir.ac.cn) ; Zhang, Xian(xzhang14s@imr.ac.cn) ; Liu, Chunzhong(czliu@sau.edu.cn)
	2018-11-09
发表期刊	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN	0013-4651
卷号	166 期号:1 页码:D3097-D3099
摘要	Large-scale Cu nanotwins were electrodeposited in void-free filling within blind microvia using single gelatin as additive in electrolyte. The void-free filling effect was might be caused by a gradient suppressing effect of gelatin along the microvia depth. The gradient distribution of gelatin was resulted from the strong dependence of adsorption on convection force. The adsorbed gelatin might greatly increase the surface tension on the depositing atom plane and then dragged a layer of adatom to a misarranged sites in the lattice, leading to the twinning nucleation. (C) The Author(s) 2018. Published by ECS.
资助者	National Natural Science Foundation of China (NSFC) ; Science and Technology Program of Shenyang
DOI	10.1149/2.0131901jes
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China (NSFC)[51471180] ; Science and Technology Program of Shenyang[F16-205-1-18]
WOS研究方向	Electrochemistry ; Materials Science
WOS类目	Electrochemistry ; Materials Science, Coatings & Films
WOS记录号	WOS:000449759700001
出版者	ELECTROCHEMICAL SOC INC
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/130343
专题	中国科学院金属研究所
通讯作者	Zhu, Qingsheng; Zhang, Xian; Liu, Chunzhong
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 2.Shenyang Aerosp Univ, Coll Mat Sci & Engn, Shenyang 110136, Liaoning, Peoples R China 3.Osaka Univ Ibaraki, Inst Sci & Ind Res, Osaka, Japan
推荐引用方式 GB/T 7714	Zhu, Qingsheng,Zhang, Xian,Li, Sujie,et al. Communication-Electrodeposition of Nano-Twinned Cu in Void-Free Filling for Blind Microvia of High Density Interconnect[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2018,166(1):D3097-D3099.
APA	Zhu, Qingsheng,Zhang, Xian,Li, Sujie,Liu, Chunzhong,&Li, Cai-Fu.(2018).Communication-Electrodeposition of Nano-Twinned Cu in Void-Free Filling for Blind Microvia of High Density Interconnect.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,166(1),D3097-D3099.
MLA	Zhu, Qingsheng,et al."Communication-Electrodeposition of Nano-Twinned Cu in Void-Free Filling for Blind Microvia of High Density Interconnect".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 166.1(2018):D3097-D3099.