Magnetic Field Modulated Weak Localization and Antilocalization State in Bi-2(TexSe1-x)(3) Films

doi:10.1002/pssb.201800272

IMR OpenIR

	Magnetic Field Modulated Weak Localization and Antilocalization State in Bi-2(TexSe1-x)(3) Films
	Wang, Zhenhua 1; Wei, Lingnan 1,2; Li, Mingze 1,2; Zhang, Zhidong 1; Gao, Xuan P. A.3
通讯作者	Wang, Zhenhua(zhwang@imr.ac.cn)
	2018-12-01
发表期刊	PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
ISSN	0370-1972
卷号	255 期号:12 页码:8
摘要	The magneto-transport properties of a series of Bi-2(TexSe1-x)(3) films are investigated. It is seen that the doped samples develop an insulating behavior at low temperatures upon the increasing doping level as compared to the pristine sample Bi2Se3. The field evolution of the magneto-resistance (MR) under perpendicular and parallel magnetic fields for Bi-2(TexSe1-x)(3) films with x = 0, 0.1, 0.24, 0.4, and 0.6 at temperatures from 2 to 200 K is investigated. A low field cusp behavior appears in MR data of Bi-2(Te0.1Se0.9)(3) film, which is associated with the weak anti-localization (WAL). In Bi-2(Te0.4Se0.6)(3) films, MR with perpendicular and parallel magnetic fields shows signatures of WAL at low magnetic fields. A remarkable negative behavior, similar to weak localization (WL), under a high magnetic field parallel to the film surface is found which is dominated by bulk-state electrons. MR of Bi-2(Te0.6Se0.4)(3) film reveals a low-field WAL behavior and a high-field parabolic behavior, revealing a two-dimensional magneto-transport property.
关键词	Bi2Se3 localization magnetic-transport properties Te-doped films weak antilocalization
资助者	National Natural Science Foundation of China ; National Basic Research Program ; National Science Foundation
DOI	10.1002/pssb.201800272
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51522104] ; National Natural Science Foundation of China[51331006] ; National Basic Research Program[2017YFA0206302] ; National Science Foundation[DMR-1151534]
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
WOS记录号	WOS:000453382600022
出版者	WILEY-V C H VERLAG GMBH
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/130818
专题	中国科学院金属研究所
通讯作者	Wang, Zhenhua
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China 3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
推荐引用方式 GB/T 7714	Wang, Zhenhua,Wei, Lingnan,Li, Mingze,et al. Magnetic Field Modulated Weak Localization and Antilocalization State in Bi-2(TexSe1-x)(3) Films[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2018,255(12):8.
APA	Wang, Zhenhua,Wei, Lingnan,Li, Mingze,Zhang, Zhidong,&Gao, Xuan P. A..(2018).Magnetic Field Modulated Weak Localization and Antilocalization State in Bi-2(TexSe1-x)(3) Films.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,255(12),8.
MLA	Wang, Zhenhua,et al."Magnetic Field Modulated Weak Localization and Antilocalization State in Bi-2(TexSe1-x)(3) Films".PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 255.12(2018):8.