| Room-Temperature Ferroelectricity in Hexagonally Layered alpha-In2Se3 Nanoflakes down to the Monolayer Limit | |
| Xue, Fei1; Hu, Weijin2; Lee, Ko-Chun3; Lu, Li-Syuan4; Zhang, Junwei1; Tang, Hao-Ling1; Han, Ali1; Hsu, Wei-Ting4; Tu, Shaobo1; Chang, Wen-Hao4; Lien, Chen-Hsin3; He, Jr-Hau5; Zhang, Zhidong2; Li, Lain-Jong1,6; Zhang, Xixiang1 | |
| Corresponding Author | Xue, Fei(xuefei0828@gmail.com) ; Li, Lain-Jong(ljliv@tsmc.com) ; Zhang, Xixiang(xixiang.zhang@kaust.edu.sa) |
| 2018-12-12 | |
| Source Publication | ADVANCED FUNCTIONAL MATERIALS
 |
| ISSN | 1616-301X |
| Volume | 28Issue:50Pages:7 |
| Abstract | 2D ferroelectric material has emerged as an attractive building block for high density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking alpha-In2Se3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in a hexagonal alpha-In2Se3 nanoflake with uniform thickness can survive to 6 nm. Most strikingly, the electric-field-induced polarization switching and hysteresis loop are, respectively, observed down to the bilayer and monolayer (approximate to 1.2 nm) thicknesses, which designates it as the thinnest layered ferroelectric and verifies the corresponding theoretical calculation. In addition, two types of ferroelectric nanodevices employing the OOP and IP polarizations in 2H alpha-In2Se3 are developed, which are applicable for nonvolatile memories and heterostructure-based nanoelectronics/optoelectronics. |
| Keyword | hexagonal alpha-In2Se3 layered 2D materials monolayer room-temperature ferroelectricity |
| Funding Organization | King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) ; Hundred Talents Program of the Chinese Academy of Sciences ; Ministry of Science and Technology (MOST) of Taiwan ; Center for Emergent Functional Matter Science (CEFMS) of NCTU |
| DOI | 10.1002/adfm.201803738 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR)[CRF-2015-2634-CRG4] ; King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR)[CRF-2016-2996-CRG5] ; Hundred Talents Program of the Chinese Academy of Sciences ; Ministry of Science and Technology (MOST) of Taiwan[105-2119-M-009-014-MY3] ; Ministry of Science and Technology (MOST) of Taiwan[107-2112-M-009-024-MY3] ; Center for Emergent Functional Matter Science (CEFMS) of NCTU |
| WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS Subject | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS ID | WOS:000456421000002 |
| Publisher | WILEY-V C H VERLAG GMBH |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/131308 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Xue, Fei; Li, Lain-Jong; Zhang, Xixiang |
| Affiliation | 1.King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia 2.Chinese Acad Sci, IMR, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 3.Natl TsingHua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan 4.Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan 5.King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn Div, Thuwal 239556900, Saudi Arabia 6.TSMC, Corp Res & Chief Technol Off, Hsinchu 30075, Taiwan |
| Recommended Citation GB/T 7714 | Xue, Fei,Hu, Weijin,Lee, Ko-Chun,et al. Room-Temperature Ferroelectricity in Hexagonally Layered alpha-In2Se3 Nanoflakes down to the Monolayer Limit[J]. ADVANCED FUNCTIONAL MATERIALS,2018,28(50):7. |
| APA | Xue, Fei.,Hu, Weijin.,Lee, Ko-Chun.,Lu, Li-Syuan.,Zhang, Junwei.,...&Zhang, Xixiang.(2018).Room-Temperature Ferroelectricity in Hexagonally Layered alpha-In2Se3 Nanoflakes down to the Monolayer Limit.ADVANCED FUNCTIONAL MATERIALS,28(50),7. |
| MLA | Xue, Fei,et al."Room-Temperature Ferroelectricity in Hexagonally Layered alpha-In2Se3 Nanoflakes down to the Monolayer Limit".ADVANCED FUNCTIONAL MATERIALS 28.50(2018):7. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment