AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity

doi:10.1002/adfm.201900314

IMR OpenIR

	AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity
	Wu, Feng 1; Xia, Hui 1; Sun, Haiding 2; Zhang, Junwei 3,4; Gong, Fan 1; Wang, Zhen 1; Chen, Long 5; Wang, Peng 1,6; Long, Mingsheng 1,6; Wu, Xing 7; Wang, Jianlu 1,6; Ren, Wencai 5; Chen, Xiaoshuang 1; Lu, Wei 1; Hu, Weida 1,6
通讯作者	Wang, Jianlu(jlwang@mail.sitp.ac.cn) ; Hu, Weida(wdhu@mail.sitp.ac.cn)
	2019-03-21
发表期刊	ADVANCED FUNCTIONAL MATERIALS
ISSN	1616-301X
卷号	29 期号:12 页码:9
摘要	Van der Waals heterojunctions made of 2D materials offer competitive opportunities in designing and achieving multifunctional and high-performance electronic and optoelectronic devices. However, due to the significant reverse tunneling current in such thin p-n junctions, a low rectification ratio along with a large reverse current is often inevitable for the heterojunctions. Here, a vertically stacked van der Waals heterojunction (vdWH) tunneling device is reported consisting of black arsenic phosphorus (AsP) and indium selenide (InSe), which shows a record high reverse rectification ratio exceeding 10(7) along with an unusual ultralow forward current below picoampere and a high current on/off ratio over 10(8) simultaneously at room temperature under the proper band alignment design of both the Schottky junction and the heterojunction. Therefore, the vdWH tunneling device can function as an ultrasensitive photodetector with an ultrahigh light on/off ratio of 1 x 10(7), a comparable responsivity of around 1 A W-1, and a high detectivity over 1 x 10(12) Jones in the visible wavelength range. Furthermore, the device exhibits a clear photovoltaic effect and shows a spectral detection capability up to 1550 nm. The work sheds light on developing future electronic and optoelectronic multifunctional devices based on the van der Waals integration of 2D materials with designed band alignment.
关键词	backward diodes photodiodes rectification tunneling van der Waals heterojunctions
资助者	National Natural Science Foundation of China ; Key Research Project of Frontier Science of Chinese Academy of Sciences (CAS) ; Natural Science Foundation of Shanghai ; CAS Pioneer Hundred Talents Program ; China Postdoctoral Science Foundation ; CAS Interdisciplinary Innovation Team
DOI	10.1002/adfm.201900314
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[61725505] ; National Natural Science Foundation of China[11734016] ; National Natural Science Foundation of China[61521005] ; National Natural Science Foundation of China[61674157] ; Key Research Project of Frontier Science of Chinese Academy of Sciences (CAS)[QYZDB-SSW-JSC031] ; Natural Science Foundation of Shanghai[18ZR1445800] ; Natural Science Foundation of Shanghai[18ZR1445900] ; CAS Pioneer Hundred Talents Program ; China Postdoctoral Science Foundation[2018M632171] ; CAS Interdisciplinary Innovation Team
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000462624900024
出版者	WILEY-V C H VERLAG GMBH
引用统计	被引频次：140[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/132493
专题	中国科学院金属研究所
通讯作者	Wang, Jianlu; Hu, Weida
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China 2.Univ Sci & Technol China, Sch Microelect, Hefei 230026, Anhui, Peoples R China 3.Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China 4.Lanzhou Univ, Electron Microscopy Ctr, Lanzhou 730000, Gansu, Peoples R China 5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 6.Chinese Acad Sci, Univ Chinese Acad Sci, Beijing 100049, Peoples R China 7.East China Normal Univ, Dept Elect Engn, Shanghai Key Lab Multidimens Informat Proc, Shanghai 200241, Peoples R China
推荐引用方式 GB/T 7714	Wu, Feng,Xia, Hui,Sun, Haiding,et al. AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity[J]. ADVANCED FUNCTIONAL MATERIALS,2019,29(12):9.
APA	Wu, Feng.,Xia, Hui.,Sun, Haiding.,Zhang, Junwei.,Gong, Fan.,...&Hu, Weida.(2019).AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity.ADVANCED FUNCTIONAL MATERIALS,29(12),9.
MLA	Wu, Feng,et al."AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity".ADVANCED FUNCTIONAL MATERIALS 29.12(2019):9.