| Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films | |
| Zhang, Anqi1,2; Wei, Feng1,3; Yan, Chenhui1,3; Wang, Fei1,3; Ma, Song1; Zhang, Zhidong1 | |
| Corresponding Author | Ma, Song(songma@imr.ac.cn) |
| 2019-07-05 | |
| Source Publication | NANOTECHNOLOGY
 |
| ISSN | 0957-4484 |
| Volume | 30Issue:27Pages:6 |
| Abstract | We report the magneotransport studies on the topological crystalline insulator (TCI) Pb1-xSnxTe (111) single crystal thin films grown by molecular beam epitaxy. By decreasing Sn content, an enhanced sheet resistance and decreased hole density are observed in Pb1-xSnxTe (111) thin films A weak antilocalization likely related to the topological surface states is observed in transport of Pb1-xSnxTe (x > 0.4) thin films, whereas a weak localization is displayed in Pb1-xSnxTe (x < 0.4) thin films This tunable weak antilocalization to weak localization transition is attributed to the open of Dirac gap because of the topological phase transition in TCI Pb1-xSnxTe. Our research has a potential application in the tunable electronic and spintronic devices and is very significant to the fundamental research based on TCI Pb1-xSnxTe thin film. |
| Keyword | topological crystalline insulator Pb1-xSnxTe (111) topological phase transition weak antilocalization weak localization |
| Funding Organization | National Natural Science Foundation of China ; National Key R&D Program of China |
| DOI | 10.1088/1361-6528/ab13cf |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[51571195] ; National Natural Science Foundation of China[51871219] ; National Natural Science Foundation of China[51590883] ; National Key R&D Program of China[2017YFA0206301] |
| WOS Research Area | Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS Subject | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:000465893800001 |
| Publisher | IOP PUBLISHING LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/133051 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Ma, Song |
| Affiliation | 1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| Recommended Citation GB/T 7714 | Zhang, Anqi,Wei, Feng,Yan, Chenhui,et al. Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films[J]. NANOTECHNOLOGY,2019,30(27):6. |
| APA | Zhang, Anqi,Wei, Feng,Yan, Chenhui,Wang, Fei,Ma, Song,&Zhang, Zhidong.(2019).Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films.NANOTECHNOLOGY,30(27),6. |
| MLA | Zhang, Anqi,et al."Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films".NANOTECHNOLOGY 30.27(2019):6. |
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