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Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films
Zhang, Anqi1,2; Wei, Feng1,3; Yan, Chenhui1,3; Wang, Fei1,3; Ma, Song1; Zhang, Zhidong1
Corresponding AuthorMa, Song(songma@imr.ac.cn)
2019-07-05
Source PublicationNANOTECHNOLOGY
ISSN0957-4484
Volume30Issue:27Pages:6
AbstractWe report the magneotransport studies on the topological crystalline insulator (TCI) Pb1-xSnxTe (111) single crystal thin films grown by molecular beam epitaxy. By decreasing Sn content, an enhanced sheet resistance and decreased hole density are observed in Pb1-xSnxTe (111) thin films A weak antilocalization likely related to the topological surface states is observed in transport of Pb1-xSnxTe (x > 0.4) thin films, whereas a weak localization is displayed in Pb1-xSnxTe (x < 0.4) thin films This tunable weak antilocalization to weak localization transition is attributed to the open of Dirac gap because of the topological phase transition in TCI Pb1-xSnxTe. Our research has a potential application in the tunable electronic and spintronic devices and is very significant to the fundamental research based on TCI Pb1-xSnxTe thin film.
Keywordtopological crystalline insulator Pb1-xSnxTe (111) topological phase transition weak antilocalization weak localization
Funding OrganizationNational Natural Science Foundation of China ; National Key R&D Program of China
DOI10.1088/1361-6528/ab13cf
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51571195] ; National Natural Science Foundation of China[51871219] ; National Natural Science Foundation of China[51590883] ; National Key R&D Program of China[2017YFA0206301]
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000465893800001
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/133051
Collection中国科学院金属研究所
Corresponding AuthorMa, Song
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Anqi,Wei, Feng,Yan, Chenhui,et al. Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films[J]. NANOTECHNOLOGY,2019,30(27):6.
APA Zhang, Anqi,Wei, Feng,Yan, Chenhui,Wang, Fei,Ma, Song,&Zhang, Zhidong.(2019).Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films.NANOTECHNOLOGY,30(27),6.
MLA Zhang, Anqi,et al."Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-xSnxTe (111) thin films".NANOTECHNOLOGY 30.27(2019):6.
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