Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors

doi:10.1002/adfm.201807979

IMR OpenIR

	Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors
	Khan, Usman 1; Luo, Yuting 1; Tang, Lei 1; Teng, Changjiu 1; Liu, Jiaman 1; Liu, Bilu 1; Cheng, Hui-Ming 1,2
通讯作者	Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn)
	2019-04-04
发表期刊	ADVANCED FUNCTIONAL MATERIALS
ISSN	1616-301X
卷号	29 期号:14 页码:9
摘要	Atomically thin 2D materials have received intense interest both scientifically and technologically. Bismuth oxyselenide (Bi2O2Se ) is a semiconducting 2D material with high electron mobility and good stability, making it promising for high-performance electronics and optoelectronics. Here, an ambient-pressure vapor-solid (VS) deposition approach for the growth of millimeter-size 2D Bi2O2Se single crystal domains with thicknesses down to one monolayer is reported. The VS-grown 2D Bi2O2Se has good crystalline quality, chemical uniformity, and stoichiometry. Field-effect transistors (FETs) are fabricated using this material and they show a small contact resistivity of 55.2 Omega cm measured by a transfer line method. Upon light irradiation, a phototransistor based on the Bi2O2Se FETs exhibits a maximum responsivity of 22 100 AW(-1), which is a record among currently reported 2D semiconductors and approximately two orders of magnitude higher than monolayer MoS2. The Bi2O2Se phototransistor shows a gate tunable photodetectivity up to 3.4 x 10(15) Jones and an on/off ratio up to approximate to 10(9), both of which are much higher than phototransistors based on other 2D materials reported so far. The results of this study indicate a method to grow large 2D Bi2O2Se single crystals that have great potential for use in optoelectronic applications.
关键词	Bi2O2Se contact resistance detectivity millimeter-size single crystal phototransistor responsivity vapor-solid deposition
资助者	National Natural Science Foundation of China ; Youth 1000-Talent Program of China ; Shenzhen Basic Research Project ; National Key RD Program ; Guangdong Innovative and Entrepreneurial Research Team Program ; Economic, Trade and Information Commission of Shenzhen Municipality ; Development & Reform Commission of Shenzhen Municipality
DOI	10.1002/adfm.201807979
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51521091] ; Youth 1000-Talent Program of China ; Shenzhen Basic Research Project[JCYJ20170307140956657] ; National Key RD Program[2018YFA0307200] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Economic, Trade and Information Commission of Shenzhen Municipality[201901171523] ; Development & Reform Commission of Shenzhen Municipality
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000467109100013
出版者	WILEY-V C H VERLAG GMBH
引用统计	被引频次：186[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/133081
专题	中国科学院金属研究所
通讯作者	Liu, Bilu; Cheng, Hui-Ming
作者单位	1.Tsinghua Univ, TBSI, Shenzhen Geim Graphene Ctr SGC, Shenzhen 518055, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
推荐引用方式 GB/T 7714	Khan, Usman,Luo, Yuting,Tang, Lei,et al. Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors[J]. ADVANCED FUNCTIONAL MATERIALS,2019,29(14):9.
APA	Khan, Usman.,Luo, Yuting.,Tang, Lei.,Teng, Changjiu.,Liu, Jiaman.,...&Cheng, Hui-Ming.(2019).Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors.ADVANCED FUNCTIONAL MATERIALS,29(14),9.
MLA	Khan, Usman,et al."Controlled Vapor Solid Deposition of Millimeter-Size Single Crystal 2D Bi2O2Se for High-Performance Phototransistors".ADVANCED FUNCTIONAL MATERIALS 29.14(2019):9.