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Water-assisted rapid growth of monolayer graphene films on SiO2/Si substrates
Wei, Shijing1,2,3,4; Ma, Lai-Peng1; Chen, Mao-Lin1,5; Liu, Zhibo1; Ma, Wei1,5; Sun, Dong-Ming1,5; Cheng, Hui-Ming1,2,5,6; Ren, Wencai1
Corresponding AuthorCheng, Hui-Ming(cheng@imr.ac.cn) ; Ren, Wencai(wcren@imr.ac.cn)
2019-07-01
Source PublicationCARBON
ISSN0008-6223
Volume148Pages:241-248
AbstractMetal-free growth of high-quality monolayer graphene films by chemical vapor deposition (CVD) on dielectric substrates is of great significance for the development of high-performance graphene-based electronic and optoelectronic devices. However, the existing CVD processes suffer from poor structural uniformity (or growth quality) and/or a slow growth rate due to the negligible catalytic activity of dielectric substrates. Here, we report a water-assisted CVD process for rapid growth of monolayer graphene film on SiO2/Si substrate without using metal catalysts or ultra-high temperature. Even trace amount of water enables the preferential formation of monolayer graphene films with significantly reduced structural defects. Particularly, this strategy enables the rapid growth of monolayer graphene by effectively lowering the growth kinetic barrier. We attribute the benefits of water on simultaneously improving the structural uniformity and growth rate to its mild oxidative effect and the role in accelerating the release of oxygen from the SiO2/Si substrate, respectively. Our work provides helpful information for efficient and controllable CVD growth of high-quality graphene on dielectric substrates. (C) 2019 Elsevier Ltd. All rights reserved.
Funding OrganizationMinistry of Science and Technology of China ; National Science Foundation of China ; Chinese Academy of Sciences ; Strategic Priority Research Programof Chinese Academy of Sciences
DOI10.1016/j.carbon.2019.03.083
Indexed BySCI
Language英语
Funding ProjectMinistry of Science and Technology of China[2016YFA0200101] ; Ministry of Science and Technology of China[2016YFB04001104] ; National Science Foundation of China[51325205] ; National Science Foundation of China[51290273] ; National Science Foundation of China[51521091] ; National Science Foundation of China[51272256] ; National Science Foundation of China[61422406] ; National Science Foundation of China[61574143] ; Chinese Academy of Sciences[KGZD-EW-303-1] ; Chinese Academy of Sciences[KGZD-EW-303-3] ; Chinese Academy of Sciences[KGZD-EW-T06] ; Chinese Academy of Sciences[XDPB06] ; Strategic Priority Research Programof Chinese Academy of Sciences[XDB30000000]
WOS Research AreaChemistry ; Materials Science
WOS SubjectChemistry, Physical ; Materials Science, Multidisciplinary
WOS IDWOS:000468421900026
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Cited Times:16[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/133359
Collection中国科学院金属研究所
Corresponding AuthorCheng, Hui-Ming; Ren, Wencai
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
5.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China
6.Tsinghua Univ, Shenzhen Geim Graphene Ctr, TBSI, Shenzhen 518055, Peoples R China
Recommended Citation
GB/T 7714
Wei, Shijing,Ma, Lai-Peng,Chen, Mao-Lin,et al. Water-assisted rapid growth of monolayer graphene films on SiO2/Si substrates[J]. CARBON,2019,148:241-248.
APA Wei, Shijing.,Ma, Lai-Peng.,Chen, Mao-Lin.,Liu, Zhibo.,Ma, Wei.,...&Ren, Wencai.(2019).Water-assisted rapid growth of monolayer graphene films on SiO2/Si substrates.CARBON,148,241-248.
MLA Wei, Shijing,et al."Water-assisted rapid growth of monolayer graphene films on SiO2/Si substrates".CARBON 148(2019):241-248.
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