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Oxygen-Valve Formed in Cobaltite-Based Heterostructures by Ionic Liquid and Ferroelectric Dual-Gating
Gu, Youdi1,2; Xu, Kun3,4; Song, Cheng2; Zhong, Xiaoyan3; Zhang, Hongrui5; Mao, Haijun6; Saleem, Muhammad Shahrukh2; Sun, Jirong5; Liu, Wei1; Zhang, Zhidong1; Pan, Feng2; Zhu, Jing3
通讯作者Song, Cheng(songcheng@mail.tsinghua.edu.cn) ; Liu, Wei(wliu@imr.ac.cn)
2019-05-29
发表期刊ACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
卷号11期号:21页码:19584-19595
摘要Manipulation of oxygen vacancies via electric-field-controlled ionic liquid gating has been reported in many model systems within the emergent fields of oxide electronics and iontronics. It is then significant to investigate the oxygen vacancy formation/annihilation and migration across an additional ferroelectric layer with ionic liquid gating. Here, we report that via a combination of ionic liquid and ferroelectric gating, the remote control of oxygen vacancies and magnetic phase transition can be achieved in SrCoO2.5 films capped with an ultrathin ferroelectric BaTiO3 layer at room temperature. The ultrathin BaTiO3 layer acts as an atomic oxygen valve and is semitransparent to oxygen-ion transport due to the competing interaction between vertical electron tunneling and ferroelectric polarization plus surface electrochemical changes in itself, thus resulting in the striking emergence of new mixed-phase SrCoOx. The lateral coexistence of brownmillerite phase SrCoO2.5 and perovskite phase SrCoO3-delta was directly observed by transmission electron microscopy. Besides the fundamental significance of long-range interaction in ionic liquid gating, the ability to control the flow of oxygen ions across the heterointerface by the oxygen valve provides a new approach on the atomic scale for designing multistate memories, sensors, and solid-oxide fuel cells.
关键词ionic liquid gating ferroelectric polarization oxygen vacancies phase transition oxygen valve
资助者National Key R&D Program of China ; National Natural Science Foundation of China ; National 973 Project of China
DOI10.1021/acsami.9b02442
收录类别SCI
语种英语
资助项目National Key R&D Program of China[2017YFB0405704] ; National Natural Science Foundation of China[51571128] ; National Natural Science Foundation of China[51671110] ; National Natural Science Foundation of China[51590883] ; National Natural Science Foundation of China[51702363] ; National Natural Science Foundation of China[51761135131] ; National 973 Project of China[2015CB654902]
WOS研究方向Science & Technology - Other Topics ; Materials Science
WOS类目Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号WOS:000470034700076
出版者AMER CHEMICAL SOC
引用统计
被引频次:34[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/133824
专题中国科学院金属研究所
通讯作者Song, Cheng; Liu, Wei
作者单位1.Chinese Acad Sci, Univ Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
2.Tsinghua Univ, Key Lab Adv Mat MOE, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
3.Tsinghua Univ, Natl Ctr Electron Microscopy Beijing, Key Lab Adv Mat MOE, State Key Lab New Ceram & Fine Proc,Sch Mat Sci &, Beijing 100084, Peoples R China
4.Tsinghua Univ, Cent Nano & Micro Mech, Beijing 100084, Peoples R China
5.Chinese Acad Sci, Univ Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
6.Natl Univ Def Technol, Coll Aerosp Sci & Engn, Changsha 410073, Hunan, Peoples R China
推荐引用方式
GB/T 7714
Gu, Youdi,Xu, Kun,Song, Cheng,et al. Oxygen-Valve Formed in Cobaltite-Based Heterostructures by Ionic Liquid and Ferroelectric Dual-Gating[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(21):19584-19595.
APA Gu, Youdi.,Xu, Kun.,Song, Cheng.,Zhong, Xiaoyan.,Zhang, Hongrui.,...&Zhu, Jing.(2019).Oxygen-Valve Formed in Cobaltite-Based Heterostructures by Ionic Liquid and Ferroelectric Dual-Gating.ACS APPLIED MATERIALS & INTERFACES,11(21),19584-19595.
MLA Gu, Youdi,et al."Oxygen-Valve Formed in Cobaltite-Based Heterostructures by Ionic Liquid and Ferroelectric Dual-Gating".ACS APPLIED MATERIALS & INTERFACES 11.21(2019):19584-19595.
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