| Response to Comments on E. Huttunen-Saarivirta et al., "Kinetic Properties of the Passive Film on Copper in the Presence of Sulfate-Reducing Bacteria" [J. Electrochem. Soc., 165, C450 (2018)] | |
| Huttunen-Saarivirta, E.1; Rajala, P.1; Carpen, L.1; Wang, J.2,3; Liu, F.2,4; Ghanbari, E.2; Mao, F.5; Dong, C.6; Yang, J.2; Sarifi-Asl, S.2,7; Macdonald, D. D.2 | |
| Corresponding Author | Macdonald, D. D.(macdonald@berkeley.edu) |
| 2019-06-10 | |
| Source Publication | JOURNAL OF THE ELECTROCHEMICAL SOCIETY
 |
| ISSN | 0013-4651 |
| Volume | 166Issue:10Pages:Y17-Y26 |
| Abstract | The Comments by Martino et al.(1) on the original manuscript(2) criticize our interpretation of the existence and properties of the Cu2S barrier layer of the passive film that forms on the surface of copper in SRB-bearing groundwater at 10 degrees C. First, it is necessary to recognize that this discussion involves two forms of copper, which we refer to as "pure copper (P-Cu)" (nominally > 99.999%) and " oxygen-free phosphorous copper (OFP-Cu)". P-Cu has been used in the majority of our work(3-6) with only some of our later work employing OFP-Cu,(2) a point that does not seem to be appreciated by Martino et al.(1) On the other hand, the Shoesmith group appears to have concentrated exclusively upon OFP-Cu, at least in recent years.(7-11) This difference is of crucial importance in responding to the critique by Martino et al.(1) (c) 2019 The Electrochemical Society. |
| DOI | 10.1149/2.0771910jes |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Electrochemistry ; Materials Science |
| WOS Subject | Electrochemistry ; Materials Science, Coatings & Films |
| WOS ID | WOS:000471101800002 |
| Publisher | ELECTROCHEMICAL SOC INC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/133952 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Macdonald, D. D. |
| Affiliation | 1.VTT Tech Res Ctr Finland, Lifecycle Solut, FI-02044 Espoo, Finland 2.Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94709 USA 3.Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Key Lab Nucl Mat & Safety Assessment, Shenyang 110016, Liaoning, Peoples R China 5.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China 6.Univ Sci & Technol Beijing, Ctr Corros & Protect, Beijing 100083, Peoples R China 7.Chevron R&D, Richmond, CA USA |
| Recommended Citation GB/T 7714 | Huttunen-Saarivirta, E.,Rajala, P.,Carpen, L.,et al. Response to Comments on E. Huttunen-Saarivirta et al., "Kinetic Properties of the Passive Film on Copper in the Presence of Sulfate-Reducing Bacteria" [J. Electrochem. Soc., 165, C450 (2018)][J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2019,166(10):Y17-Y26. |
| APA | Huttunen-Saarivirta, E..,Rajala, P..,Carpen, L..,Wang, J..,Liu, F..,...&Macdonald, D. D..(2019).Response to Comments on E. Huttunen-Saarivirta et al., "Kinetic Properties of the Passive Film on Copper in the Presence of Sulfate-Reducing Bacteria" [J. Electrochem. Soc., 165, C450 (2018)].JOURNAL OF THE ELECTROCHEMICAL SOCIETY,166(10),Y17-Y26. |
| MLA | Huttunen-Saarivirta, E.,et al."Response to Comments on E. Huttunen-Saarivirta et al., "Kinetic Properties of the Passive Film on Copper in the Presence of Sulfate-Reducing Bacteria" [J. Electrochem. Soc., 165, C450 (2018)]".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 166.10(2019):Y17-Y26. |
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