Response to Comments on E. Huttunen-Saarivirta et al., "Kinetic Properties of the Passive Film on Copper in the Presence of Sulfate-Reducing Bacteria" [J. Electrochem. Soc., 165, C450 (2018)]

doi:10.1149/2.0771910jes

IMR OpenIR

	Response to Comments on E. Huttunen-Saarivirta et al., "Kinetic Properties of the Passive Film on Copper in the Presence of Sulfate-Reducing Bacteria" [J. Electrochem. Soc., 165, C450 (2018)]
	Huttunen-Saarivirta, E.1; Rajala, P.1; Carpen, L.1; Wang, J.2,3; Liu, F.2,4; Ghanbari, E.2; Mao, F.5; Dong, C.6; Yang, J.2; Sarifi-Asl, S.2,7; Macdonald, D. D.2
通讯作者	Macdonald, D. D.(macdonald@berkeley.edu)
	2019-06-10
发表期刊	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN	0013-4651
卷号	166 期号:10 页码:Y17-Y26
摘要	The Comments by Martino et al.(1) on the original manuscript(2) criticize our interpretation of the existence and properties of the Cu2S barrier layer of the passive film that forms on the surface of copper in SRB-bearing groundwater at 10 degrees C. First, it is necessary to recognize that this discussion involves two forms of copper, which we refer to as "pure copper (P-Cu)" (nominally > 99.999%) and " oxygen-free phosphorous copper (OFP-Cu)". P-Cu has been used in the majority of our work(3-6) with only some of our later work employing OFP-Cu,(2) a point that does not seem to be appreciated by Martino et al.(1) On the other hand, the Shoesmith group appears to have concentrated exclusively upon OFP-Cu, at least in recent years.(7-11) This difference is of crucial importance in responding to the critique by Martino et al.(1) (c) 2019 The Electrochemical Society.
DOI	10.1149/2.0771910jes
收录类别	SCI
语种	英语
WOS研究方向	Electrochemistry ; Materials Science
WOS类目	Electrochemistry ; Materials Science, Coatings & Films
WOS记录号	WOS:000471101800002
出版者	ELECTROCHEMICAL SOC INC
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/133956
专题	中国科学院金属研究所
通讯作者	Macdonald, D. D.
作者单位	1.VTT Tech Res Ctr Finland, Lifecycle Solut, FI-02044 Espoo, Finland 2.Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94709 USA 3.Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Key Lab Nucl Mat & Safety Assessment, Shenyang 110016, Liaoning, Peoples R China 5.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China 6.Univ Sci & Technol Beijing, Ctr Corros & Protect, Beijing 100083, Peoples R China 7.Chevron R&D, Richmond, CA USA
推荐引用方式 GB/T 7714	Huttunen-Saarivirta, E.,Rajala, P.,Carpen, L.,et al. Response to Comments on E. Huttunen-Saarivirta et al., "Kinetic Properties of the Passive Film on Copper in the Presence of Sulfate-Reducing Bacteria" [J. Electrochem. Soc., 165, C450 (2018)][J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2019,166(10):Y17-Y26.
APA	Huttunen-Saarivirta, E..,Rajala, P..,Carpen, L..,Wang, J..,Liu, F..,...&Macdonald, D. D..(2019).Response to Comments on E. Huttunen-Saarivirta et al., "Kinetic Properties of the Passive Film on Copper in the Presence of Sulfate-Reducing Bacteria" [J. Electrochem. Soc., 165, C450 (2018)].JOURNAL OF THE ELECTROCHEMICAL SOCIETY,166(10),Y17-Y26.
MLA	Huttunen-Saarivirta, E.,et al."Response to Comments on E. Huttunen-Saarivirta et al., "Kinetic Properties of the Passive Film on Copper in the Presence of Sulfate-Reducing Bacteria" [J. Electrochem. Soc., 165, C450 (2018)]".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 166.10(2019):Y17-Y26.