From linear magnetoresistance to parabolic magnetoresistance in Cu and Cr-doped topological insulator Bi2Se3 films

doi:10.1016/j.jpcs.2017.07.003

IMR OpenIR

	From linear magnetoresistance to parabolic magnetoresistance in Cu and Cr-doped topological insulator Bi2Se3 films
	Li, Mingze 1,2; Wang, Zhenhua 1,2; Yang, Liang 1,2; Gao, Xuan P. A.3; Zhang, Zhidong 1,2
通讯作者	Wang, Zhenhua(zhwang@imr.ac.cn) ; Gao, Xuan P. A.(xuan.gao@case.edu)
	2019-05-01
发表期刊	JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN	0022-3697
卷号	128 页码:331-336
摘要	We report on the magnetotransport properties of Cu- and Cr-doped topological insulator Bi2Se3 films grown on silicon (100) substrate by chemical vapor deposition. Upon doping of non-magnetic Cu, Bi2Se3 film's carrier density is reduced and the magnetoresistance changes from a strong positive parabolic magnetoresistance to a linear magnetoresistance. This linear magnetoresistance is similar to the linear magnetoresistance in other gapless topological states of matter and has a strong temperature dependence. In contrast, the magnetoresistance of Crdoped Bi2Se3 films remains to be parabolic and becomes temperature independent upon increased Cr-doping. These results suggest that the absence of linear magnetoresistance in Cr-doped Bi2Se3 is related to the magnetic dopants that induce time reversal symmetry breaking and surface states gap opening.
关键词	Topological insulator Bismuth selenide Magnetoresistance Magnetic doping Thin film
资助者	National Natural Science Foundation of China ; National Basic Research Program ; National Science Foundation
DOI	10.1016/j.jpcs.2017.07.003
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51522104] ; National Natural Science Foundation of China[51331006] ; National Basic Research Program[2017YFA0206302] ; National Science Foundation[DMR-1151534]
WOS研究方向	Chemistry ; Physics
WOS类目	Chemistry, Multidisciplinary ; Physics, Condensed Matter
WOS记录号	WOS:000472693100037
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/133969
专题	中国科学院金属研究所
通讯作者	Wang, Zhenhua; Gao, Xuan P. A.
作者单位	1.Univ Sci & Technol China, Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
推荐引用方式 GB/T 7714	Li, Mingze,Wang, Zhenhua,Yang, Liang,et al. From linear magnetoresistance to parabolic magnetoresistance in Cu and Cr-doped topological insulator Bi2Se3 films[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2019,128:331-336.
APA	Li, Mingze,Wang, Zhenhua,Yang, Liang,Gao, Xuan P. A.,&Zhang, Zhidong.(2019).From linear magnetoresistance to parabolic magnetoresistance in Cu and Cr-doped topological insulator Bi2Se3 films.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,128,331-336.
MLA	Li, Mingze,et al."From linear magnetoresistance to parabolic magnetoresistance in Cu and Cr-doped topological insulator Bi2Se3 films".JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 128(2019):331-336.