Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

doi:10.1002/adma.201901300

IMR OpenIR

	Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric
	Xue, Fei 1; He, Xin 1; Retamal, Jose Ramon Duran 2; Han, Ali 1; Zhang, Junwei 1; Liu, Zhixiong 1; Huang, Jing-Kai 1; Hu, Weijin 3; Tung, Vincent 1; He, Jr-Hou 2; Li, Lain-Jong 1,4; Zhang, Xixiang 1
通讯作者	He, Jr-Hou(jrhaus.he@kaust.edu.sa) ; Li, Lain-Jong(li.l@unsw.edu.au) ; Zhang, Xixiang(xixiang.zhang@kaust.edu.sa)
	2019-07-01
发表期刊	ADVANCED MATERIALS
ISSN	0935-9648
卷号	31 期号:29 页码:9
摘要	Memristive devices have been extensively demonstrated for applications in nonvolatile memory, computer logic, and biological synapses. Precise control of the conducting paths associated with the resistance switching in memristive devices is critical for optimizing their performances including ON/OFF ratios. Here, gate tunability and multidirectional switching can be implemented in memristors for modulating the conducting paths using hexagonal alpha-In2Se3, a semiconducting van der Waals ferroelectric material. The planar memristor based on in-plane (IP) polarization of alpha-In2Se3 exhibits a pronounced switchable photocurrent, as well as gate tunability of the channel conductance, ferroelectric polarization, and resistance-switching ratio. The integration of vertical alpha-In2Se3 memristors based on out-of-plane (OOP) polarization is demonstrated with a device density of 7.1 x 10(9) in.(-2) and a resistance-switching ratio of well over 10(3). A multidirectionally operated alpha-In2Se3 memristor is also proposed, enabling the control of the OOP (or IP) resistance state directly by an IP (or OOP) programming pulse, which has not been achieved in other reported memristors. The remarkable behavior and diverse functionalities of these ferroelectric alpha-In2Se3 memristors suggest opportunities for future logic circuits and complex neuromorphic computing.
关键词	ferroelectrics gate tunability memristors multidirectional programming
资助者	King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) ; Hundred Talents Program of the Chinese Academy of Sciences
DOI	10.1002/adma.201901300
收录类别	SCI
语种	英语
资助项目	King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR)[CRF-2015-2634-CRG4] ; King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR)[CRF-2016-2996-CRG5] ; Hundred Talents Program of the Chinese Academy of Sciences
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000477975900021
出版者	WILEY-V C H VERLAG GMBH
引用统计	被引频次：157[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/134642
专题	中国科学院金属研究所
通讯作者	He, Jr-Hou; Li, Lain-Jong; Zhang, Xixiang
作者单位	1.King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia 2.King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn Div, Thuwal 239556900, Saudi Arabia 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 4.Univ New South Wales, Dept Mat Sci & Engn, Sydney, NSW 2052, Australia
推荐引用方式 GB/T 7714	Xue, Fei,He, Xin,Retamal, Jose Ramon Duran,et al. Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric[J]. ADVANCED MATERIALS,2019,31(29):9.
APA	Xue, Fei.,He, Xin.,Retamal, Jose Ramon Duran.,Han, Ali.,Zhang, Junwei.,...&Zhang, Xixiang.(2019).Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric.ADVANCED MATERIALS,31(29),9.
MLA	Xue, Fei,et al."Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric".ADVANCED MATERIALS 31.29(2019):9.