Defective graphene as a high-efficiency Raman enhancement substrate

doi:10.1016/j.jmst.2019.05.012

IMR OpenIR

	Defective graphene as a high-efficiency Raman enhancement substrate
	Zhao, Tong 1,2; Liu, Zhibo 1; Xin, Xing 1,3; Cheng, Hui-Ming 1,2,4; Ren, Wencai 1,2
通讯作者	Ren, Wencai(wcren@imr.ac.cn)
	2019-09-01
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	35 期号:9 页码:1996-2002
摘要	Pristine graphene (PG) has been demonstrated to be an excellent substrate for Raman enhancement, which is called graphene-enhanced Raman scattering. However, the chemically inert and hydrophobic surface of PG hinders the adsorption of molecules especially in aqueous solutions, and consequently limits the Raman enhanced efficiency. Here, we synthesized defective graphene (DG) films by chemical vapor deposition on Au. which has a defect density of similar to 2.0 x 10(11) cm(-2). The DG shows a much better wettability than PG towards dye solution. Combining with the strong adsorption ability of defects to molecules, DG shows greatly enhanced efficiency than PG with perfect lattice. For example, the detection limit for rhodamine B can reach 2 x 10(-9) M for DG while it is on the order of 10(-7) M for PG. In addition, DG has high enhancement uniformity and the Au substrate can be reused after electrochemical bubbling transfer. These advantages suggest the great potential of the DG grown on Au for practical applications in environmental monitoring. (C) 2019 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
关键词	Defective graphene Raman enhancement Chemical vapor deposition Bubbling transfer
资助者	National Key R&D Program of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences ; Strategic Priority Research Program of Chinese Academy of Sciences
DOI	10.1016/j.jmst.2019.05.012
收录类别	SCI
语种	英语
资助项目	National Key R&D Program of China[2016YFA0200101] ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51861135201] ; Chinese Academy of Sciences[1743211] ; Chinese Academy of Sciences[YSB20160011] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000475870600023
出版者	JOURNAL MATER SCI TECHNOL
引用统计	被引频次：18[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/134817
专题	中国科学院金属研究所
通讯作者	Ren, Wencai
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Liaoning, Peoples R China 3.Univ Chinese Acad Sci, Shenyang 110016, Liaoning, Peoples R China 4.Tsinghua Univ, TBSI, Shenzhen Geim Graphene Ctr, 1001 Xueyuan Rd, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Tong,Liu, Zhibo,Xin, Xing,et al. Defective graphene as a high-efficiency Raman enhancement substrate[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2019,35(9):1996-2002.
APA	Zhao, Tong,Liu, Zhibo,Xin, Xing,Cheng, Hui-Ming,&Ren, Wencai.(2019).Defective graphene as a high-efficiency Raman enhancement substrate.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,35(9),1996-2002.
MLA	Zhao, Tong,et al."Defective graphene as a high-efficiency Raman enhancement substrate".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 35.9(2019):1996-2002.