| Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures | |
| Cai, Zhengyang1; Liu, Bilu1; Zou, Xiaolong1; Cheng, Hui-Ming1,2,3 | |
| Corresponding Author | Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(hmcheng@sz.tsinghua.edu.cn) |
| 2018-07-11 | |
| Source Publication | CHEMICAL REVIEWS
 |
| ISSN | 0009-2665 |
| Volume | 118Issue:13Pages:6091-6133 |
| Abstract | Two-dimensional (2D) materials have attracted increasing research interest because of the abundant choice of materials with diverse and tunable electronic, optical, and chemical properties. Moreover, 2D material based heterostructures combining several individual 2D materials provide unique platforms to create an almost infinite number of materials and show exotic physical phenomena as well as new properties and applications. To achieve these high expectations, methods for the scalable preparation of 2D materials and 2D heterostructures of high quality and low cost must be developed. Chemical vapor deposition (CVD) is a powerful method which may meet the above requirements, and has been extensively used to grow 2D materials and their heterostructures in recent years, despite several challenges remaining. In this review of the challenges in the CVD growth of 2D materials, we highlight recent advances in the controlled growth of single crystal 2D materials, with an emphasis on semiconducting transition metal dichalcogenides. We provide insight into the growth mechanisms of single crystal 2D domains and the key technologies used to realize wafer-scale growth of continuous and homogeneous 2D films which are important for practical applications. Meanwhile, strategies to design and grow various kinds of 2D material based heterostructures are thoroughly discussed. The applications of CVD-grown 2D materials and their heterostructures in electronics, optoelectronics, sensors, flexible devices, and electrocatalysis are also discussed. Finally, we suggest solutions to these challenges and ideas concerning future developments in this emerging field. |
| Funding Organization | National Natural Science Foundation of China ; Youth 1000-Talent Program of China ; Shenzhen Basic Research Project ; Development and Reform Commission of Shenzhen Municipality for the development of the Low-Dimensional Materials and Devices discipline |
| DOI | 10.1021/acs.chemrev.7b00536 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | National Natural Science Foundation of China[51722206] ; National Natural Science Foundation of China[51521091] ; Youth 1000-Talent Program of China ; Shenzhen Basic Research Project[JCYJ20170407155608882] ; Shenzhen Basic Research Project[JCYJ2017030714096657] ; Development and Reform Commission of Shenzhen Municipality for the development of the Low-Dimensional Materials and Devices discipline |
| WOS Research Area | Chemistry |
| WOS Subject | Chemistry, Multidisciplinary |
| WOS ID | WOS:000439010000002 |
| Publisher | AMER CHEMICAL SOC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/135927 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Liu, Bilu; Cheng, Hui-Ming |
| Affiliation | 1.Tsinghua Univ, TBSI, Shenzhen Geim Graphene Ctr SGC, Shenzhen 518055, Guangdong, Peoples R China 2.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 3.King Abdulaziz Univ, CEES, Jeddah 21589, Saudi Arabia |
| Recommended Citation GB/T 7714 | Cai, Zhengyang,Liu, Bilu,Zou, Xiaolong,et al. Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures[J]. CHEMICAL REVIEWS,2018,118(13):6091-6133. |
| APA | Cai, Zhengyang,Liu, Bilu,Zou, Xiaolong,&Cheng, Hui-Ming.(2018).Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures.CHEMICAL REVIEWS,118(13),6091-6133. |
| MLA | Cai, Zhengyang,et al."Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures".CHEMICAL REVIEWS 118.13(2018):6091-6133. |
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