Enhanced and switchable silicon-vacancy photoluminescence in air-annealed nanocrystalline diamond films

doi:10.1016/j.carbon.2019.09.054

IMR OpenIR

	Enhanced and switchable silicon-vacancy photoluminescence in air-annealed nanocrystalline diamond films
	Yang, Bing 1; Yu, Biao 1,2; Li, Haining 1,2; Huang, Nan 1; Liu, Lusheng 1; Jiang, Xin 1,3
通讯作者	Yang, Bing(byang@imr.ac.cn) ; Jiang, Xin(xjiang@imr.ac.cn)
	2020
发表期刊	CARBON
ISSN	0008-6223
卷号	156 页码:242-252
摘要	Silicon vacancy (SiV) centers in CVD-deposited nanodiamond particles or films always exhibit a photoluminescent (PL)-quenching behavior. Herein, in order to overcome this issue, air annealing of nanocrystalline diamond (NCD) films with uniform doping of Si atoms is employed to improve the PL emission efficiency of SiV centers. Without severe mass loss in diamond, SiV centers exhibit an increased PL emission intensity at 738 nmwith an increased annealing temperature and time. In comparison to the untreated film, the maximum PL enhancement reaches about 200 and 1473 folds when the NCD films are annealed at 600 degrees C for 60 min and 700 degrees C for 20 min, respectively. Such giant increase in SiV PL emission is mainly attributed to the transition of diamond surface from hydrogen to oxygen termination together with the optimized crystalline quality of the annealed films, as confirmed by the HRTEM, Raman and XPS measurements. A schematic model based on the theory of surface band bending is proposed to elucidate the mechanism of the SiV PL enhancement in oxygen-terminated NCD films: a near-surface light trap layer formed in hydrogen-terminated NCD is converted during the oxidation process, leading to the additional collection of SiV PL emission from the inner layer. (C) 2019 Elsevier Ltd. All rights reserved.
关键词	Color center Nano-crystalline diamond Luminescence Surface modification Thermal treatment
资助者	National Natural Science Foundation of China
DOI	10.1016/j.carbon.2019.09.054
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51872294]
WOS研究方向	Chemistry ; Materials Science
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary
WOS记录号	WOS:000509332200023
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：29[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/136733
专题	中国科学院金属研究所
通讯作者	Yang, Bing; Jiang, Xin
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China 3.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany
推荐引用方式 GB/T 7714	Yang, Bing,Yu, Biao,Li, Haining,et al. Enhanced and switchable silicon-vacancy photoluminescence in air-annealed nanocrystalline diamond films[J]. CARBON,2020,156:242-252.
APA	Yang, Bing,Yu, Biao,Li, Haining,Huang, Nan,Liu, Lusheng,&Jiang, Xin.(2020).Enhanced and switchable silicon-vacancy photoluminescence in air-annealed nanocrystalline diamond films.CARBON,156,242-252.
MLA	Yang, Bing,et al."Enhanced and switchable silicon-vacancy photoluminescence in air-annealed nanocrystalline diamond films".CARBON 156(2020):242-252.