A vertical silicon-graphene-germanium transistor

doi:10.1038/s41467-019-12814-1

IMR OpenIR

	A vertical silicon-graphene-germanium transistor
	Liu, Chi 1; Ma, Wei 1,2; Chen, Maolin 1,2; Ren, Wencai 1,2; Sun, Dongming 1,2
通讯作者	Sun, Dongming(dmsun@imr.ac.cn)
	2019-10-25
发表期刊	NATURE COMMUNICATIONS
ISSN	2041-1723
卷号	10 页码:7
摘要	Graphene-base transistors have been proposed for high-frequency applications because of the negligible base transit time induced by the atomic thickness of graphene. However, generally used tunnel emitters suffer from high emitter potential-barrier-height which limits the transistor performance towards terahertz operation. To overcome this issue, a graphene-base heterojunction transistor has been proposed theoretically where the graphene base is sandwiched by silicon layers. Here we demonstrate a vertical silicon-graphene-germanium transistor where a Schottky emitter constructed by single-crystal silicon and single-layer graphene is achieved. Such Schottky emitter shows a current of 692 A cm(-2) and a capacitance of 41 nF cm(-2), and thus the alpha cut-off frequency of the transistor is expected to increase from about 1 MHz by using the previous tunnel emitters to above 1 GHz by using the current Schottky emitter. With further engineering, the semiconductor-graphene-semiconductor transistor is expected to be one of the most promising devices for ultra-high frequency operation.
资助者	National Natural Science Foundation of China ; Institute of Metal Research, Chinese Academy of Sciences ; Chinese Academy of Sciences ; Strategic Priority Research Program of Chinese Academy of Sciences ; Thousand Talent Program for Young Outstanding Scientists ; National Key Research and Development Program of China
DOI	10.1038/s41467-019-12814-1
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[61704175] ; National Natural Science Foundation of China[51625203] ; National Natural Science Foundation of China[51532008] ; National Natural Science Foundation of China[51521091] ; National Natural Science Foundation of China[51272257] ; National Natural Science Foundation of China[51572264] ; National Natural Science Foundation of China[51502304] ; National Natural Science Foundation of China[61422406] ; National Natural Science Foundation of China[61574143] ; National Natural Science Foundation of China[51325205] ; National Natural Science Foundation of China[51290273] ; Institute of Metal Research, Chinese Academy of Sciences[2017-PY04] ; Chinese Academy of Sciences[KGZD-EW-T06] ; Chinese Academy of Sciences[ZDBS-LY-JSC027] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Thousand Talent Program for Young Outstanding Scientists ; National Key Research and Development Program of China[2016YFB0401104] ; National Key Research and Development Program of China[2016YFA0200101]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000492835100011
出版者	NATURE PUBLISHING GROUP
引用统计	被引频次：38[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/136816
专题	中国科学院金属研究所
通讯作者	Sun, Dongming
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China
推荐引用方式 GB/T 7714	Liu, Chi,Ma, Wei,Chen, Maolin,et al. A vertical silicon-graphene-germanium transistor[J]. NATURE COMMUNICATIONS,2019,10:7.
APA	Liu, Chi,Ma, Wei,Chen, Maolin,Ren, Wencai,&Sun, Dongming.(2019).A vertical silicon-graphene-germanium transistor.NATURE COMMUNICATIONS,10,7.
MLA	Liu, Chi,et al."A vertical silicon-graphene-germanium transistor".NATURE COMMUNICATIONS 10(2019):7.