| In Situ Construction of Hierarchical Diamond Supported on Carbon Nanowalls/Diamond for Enhanced Electron Field Emission | |
| Zhai, Zhaofeng1,3; Huang, Nan1; Yang, Bing1; Liu, Lusheng1; Li, Haining1,3; Chen, Junnan1,3; Zhang, Bingsen1; Jiang, Xin1,2 | |
| Corresponding Author | Huang, Nan(nhuang@imr.ac.cn) ; Jiang, Xin(xjiang@imr.ac.cn) |
| 2020-02-19 | |
| Source Publication | ACS APPLIED MATERIALS & INTERFACES
 |
| ISSN | 1944-8244 |
| Volume | 12Issue:7Pages:8522-8532 |
| Abstract | The integration of sp(2)-/sp(3)-bonded carbon has aroused increasing attention on attaining a great electron field emission (EFE) performance. Herein, a novel hierarchical diamond@carbon nanowalls/diamond (D@C/D) architecture is facilely prepared through the growth of the hybrid carbon nanowalls/diamond (C/D) film followed by the in situ hydrogen plasma treatment using microwave plasma chemical vapor deposition. The hierarchical D@C/D architecture is composed of thin diamond nanoplatelets sandwiched into carbon nanowalls (CNWs) as the bottom layer and the thickened nanoplatelets constituted by diamond nanograins as the upper layer. The hydrogen plasma plays an effective role in the transformation of sacrificial sp(2)-bonded CNWs to sp(3)-bonded diamond, eventually leading to the template thickening of diamond nanoplatelets in the upper layer. Impressively, the D@C/D-90 film demonstrates much better EFE behaviors of low turn-on potential (E-o = 4.3 V mu m(-1)), high current density (J(e)@8 V mu m(-1) = 20.81 mA cm(-1)), and superior long-term stability, in comparison with the pristine C/D film (E-o = 6 V mu m(-1), J(e)@8 V mu m(-1) = 0.33 mA cm(-1)). The enhanced EFE performance of the hierarchical D@C/D film is ascribed to the well established grahite pathway for electrons transported from the bottom to the top and the increased diamond emitting sites with negative electron-affinity and robust nature at the top. This work will promote the development of the high-performance cathode EFE material based on hybrid sp(2)/sp(3)-bonded carbon, and the method proposed here also provides an effective strategy to construct a diamond nanostructure for various applications. |
| Keyword | hierarchical structure carbon nanowalls diamond nanoplatelets hydrogen plasma treatment electron field emission |
| Funding Organization | Joint Research Fund Liaoning-Shenyang National Laboratory for Materials Science ; National Natural Science Foundation of China |
| DOI | 10.1021/acsami.9b18004 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Joint Research Fund Liaoning-Shenyang National Laboratory for Materials Science[20180510009] ; National Natural Science Foundation of China[51202257] |
| WOS Research Area | Science & Technology - Other Topics ; Materials Science |
| WOS Subject | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| WOS ID | WOS:000515214300072 |
| Publisher | AMER CHEMICAL SOC |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/137532 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Huang, Nan; Jiang, Xin |
| Affiliation | 1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Univ Siegen, Inst Mat Engn, D-57076 Siegen, Germany 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China |
| Recommended Citation GB/T 7714 | Zhai, Zhaofeng,Huang, Nan,Yang, Bing,et al. In Situ Construction of Hierarchical Diamond Supported on Carbon Nanowalls/Diamond for Enhanced Electron Field Emission[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12(7):8522-8532. |
| APA | Zhai, Zhaofeng.,Huang, Nan.,Yang, Bing.,Liu, Lusheng.,Li, Haining.,...&Jiang, Xin.(2020).In Situ Construction of Hierarchical Diamond Supported on Carbon Nanowalls/Diamond for Enhanced Electron Field Emission.ACS APPLIED MATERIALS & INTERFACES,12(7),8522-8532. |
| MLA | Zhai, Zhaofeng,et al."In Situ Construction of Hierarchical Diamond Supported on Carbon Nanowalls/Diamond for Enhanced Electron Field Emission".ACS APPLIED MATERIALS & INTERFACES 12.7(2020):8522-8532. |
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