| Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands | |
| Han, M. J.1,2; Tang, Y. L.1; Wang, Y. J.1; Zhu, Y. L.1; Ma, J. Y.1,3,4; Geng, W. R.1,3; Feng, Y. P.1,2; Zou, M. J.1,3; Zhang, N. B.1,3; Ma, X. L.1,4 | |
| Corresponding Author | Zhu, Y. L.(ylzhu@imr.ac.cn) ; Ma, X. L.(xlma@imr.ac.cn) |
| 2020-04-01 | |
| Source Publication | ACTA MATERIALIA
 |
| ISSN | 1359-6454 |
| Volume | 187Pages:12-18 |
| Abstract | Ferroelectrics exhibit polarization tunable resistance switching behaviors, which are promising for next-generation non-volatile memory devices. For technological applications, thinner nanoscale arrays are expected, which feature with higher density and larger ON/OFF (R-ON/OFF) ratios in the metal/ferroelectrics/semiconductor heterojunction. Here, we acquire high density BiFeO3 (BFO) nano-islands around 10 nm in thickness displaying a high R-ON/OFF ratio of 10(3), comparable to the tunnel junctions. Moreover, both the macroscopic and microscopic resistive switching behaviors of the present BFO films reveal an unexpected filamentary-type resistive switching which is modified by the charged domain walls in nano-islands dominated by the centertype domains. Particularly, the charged domain walls spontaneously formed within the BFO nano-islands are proposed as the conductive paths based on the redistribution of carriers under the applied voltages. Potential applications for memories with large RON/OFF ratios of such kind of configurable charged domain walls are demonstrated. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| Keyword | Resistive switching behavior Charged domain walls Conductive filament mode Transmission electron microscopy Piezoresponse force microscopy |
| Funding Organization | Key Research Program of Frontier Sciences CAS ; National Natural Science Foundation of China ; National Basic Research Program of China ; IMR SYNL-T.S. Ke Research Fellowship ; Youth Innovation Promotion Association CAS |
| DOI | 10.1016/j.actamat.2020.01.034 |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; National Natural Science Foundation of China[51671194] ; National Natural Science Foundation of China[51571197] ; National Basic Research Program of China[2014CB921002] ; IMR SYNL-T.S. Ke Research Fellowship ; Youth Innovation Promotion Association CAS[2016177] |
| WOS Research Area | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS Subject | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| WOS ID | WOS:000518706700002 |
| Publisher | PERGAMON-ELSEVIER SCIENCE LTD |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/137642 |
| Collection | 中国科学院金属研究所 |
| Corresponding Author | Zhu, Y. L.; Ma, X. L. |
| Affiliation | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Yuquan Rd 19, Beijing 100049, Peoples R China 3.Univ Sci & Technol China, Jinzhai Rd 96, Hefei 230026, Peoples R China 4.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Langongping Rd 287, Lanzhou 730050, Peoples R China |
| Recommended Citation GB/T 7714 | Han, M. J.,Tang, Y. L.,Wang, Y. J.,et al. Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands[J]. ACTA MATERIALIA,2020,187:12-18. |
| APA | Han, M. J..,Tang, Y. L..,Wang, Y. J..,Zhu, Y. L..,Ma, J. Y..,...&Ma, X. L..(2020).Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands.ACTA MATERIALIA,187,12-18. |
| MLA | Han, M. J.,et al."Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands".ACTA MATERIALIA 187(2020):12-18. |
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