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Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands
Han, M. J.1,2; Tang, Y. L.1; Wang, Y. J.1; Zhu, Y. L.1; Ma, J. Y.1,3,4; Geng, W. R.1,3; Feng, Y. P.1,2; Zou, M. J.1,3; Zhang, N. B.1,3; Ma, X. L.1,4
Corresponding AuthorZhu, Y. L.(ylzhu@imr.ac.cn) ; Ma, X. L.(xlma@imr.ac.cn)
2020-04-01
Source PublicationACTA MATERIALIA
ISSN1359-6454
Volume187Pages:12-18
AbstractFerroelectrics exhibit polarization tunable resistance switching behaviors, which are promising for next-generation non-volatile memory devices. For technological applications, thinner nanoscale arrays are expected, which feature with higher density and larger ON/OFF (R-ON/OFF) ratios in the metal/ferroelectrics/semiconductor heterojunction. Here, we acquire high density BiFeO3 (BFO) nano-islands around 10 nm in thickness displaying a high R-ON/OFF ratio of 10(3), comparable to the tunnel junctions. Moreover, both the macroscopic and microscopic resistive switching behaviors of the present BFO films reveal an unexpected filamentary-type resistive switching which is modified by the charged domain walls in nano-islands dominated by the centertype domains. Particularly, the charged domain walls spontaneously formed within the BFO nano-islands are proposed as the conductive paths based on the redistribution of carriers under the applied voltages. Potential applications for memories with large RON/OFF ratios of such kind of configurable charged domain walls are demonstrated. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
KeywordResistive switching behavior Charged domain walls Conductive filament mode Transmission electron microscopy Piezoresponse force microscopy
Funding OrganizationKey Research Program of Frontier Sciences CAS ; National Natural Science Foundation of China ; National Basic Research Program of China ; IMR SYNL-T.S. Ke Research Fellowship ; Youth Innovation Promotion Association CAS
DOI10.1016/j.actamat.2020.01.034
Indexed BySCI
Language英语
Funding ProjectKey Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] ; National Natural Science Foundation of China[51671194] ; National Natural Science Foundation of China[51571197] ; National Basic Research Program of China[2014CB921002] ; IMR SYNL-T.S. Ke Research Fellowship ; Youth Innovation Promotion Association CAS[2016177]
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000518706700002
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/137644
Collection中国科学院金属研究所
Corresponding AuthorZhu, Y. L.; Ma, X. L.
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China
2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Yuquan Rd 19, Beijing 100049, Peoples R China
3.Univ Sci & Technol China, Jinzhai Rd 96, Hefei 230026, Peoples R China
4.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Langongping Rd 287, Lanzhou 730050, Peoples R China
Recommended Citation
GB/T 7714
Han, M. J.,Tang, Y. L.,Wang, Y. J.,et al. Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands[J]. ACTA MATERIALIA,2020,187:12-18.
APA Han, M. J..,Tang, Y. L..,Wang, Y. J..,Zhu, Y. L..,Ma, J. Y..,...&Ma, X. L..(2020).Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands.ACTA MATERIALIA,187,12-18.
MLA Han, M. J.,et al."Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands".ACTA MATERIALIA 187(2020):12-18.
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