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High-Resolution X-Ray Diffraction Analysis of Epitaxial Films
Li Changji1; Zou Minjie1,2; Zhang Lei1; Wang Yuanming1; Wang Sucheng1
Corresponding AuthorZhang Lei(lzhang@imr.ac.cn) ; Wang Yuanming(ymwang@imr.ac.cn)
2020
Source PublicationACTA METALLURGICA SINICA
ISSN0412-1961
Volume56Issue:1Pages:99-111
AbstractEpitaxy technique has been widely used for semiconductor, ferroelectric and optical materials in the development of electronic and optoelectronic devices. Epitaxial structures with strain and defects may tune the physical properties or affect the performance of devices. High-resolution X-ray diffraction (HRXRD) has significant advantages over traditional XRD with the features of small divergence, monochromatic incident beam and high resolution detection of the diffracted beam. It is a key technique for accurate characterization of epitaxial structures in non-destructive way. In this paper, the techniques of HRXRD for epitaxial film structure characterization are outlined in terms of the relationship between diffraction and reciprocal space, the difference between high-resolution diffraction and powder diffraction such as the optical system and the geometry mode of scanning etc. Based on the corresponding relationship between the epitaxial film and the matrix structure in the reciprocal space, various factors affecting the shape of the diffraction spots are analyzed, including the state of lattice match in coherence and non-coherence, super lattice and inclined growth. The other effective factors are also demonstrated, such as finite size of film, tilt and strain of epitaxial film etc. Real examples, such as Si1-xGex(x=0.1) etc., are used to explain how to obtain the structure parameters of the epitaxial films by HRXRD spectrum analysis, including lattice constant, lattice mismatch, thickness and superlattice information. To obtain more epitaxy information, reciprocal space map (RSM) analysis can be feasibly used by reconstruction of a series of HRXRD patterns. By combining HRXRD spectrum and RSM, microstructure characterizations of PbTiO3 epitaxy films, such as micro-strain, domain structure, phase transformation can be quantitatively analyzed.
Keywordfilm growth epitaxial film high-resolution X-ray diffraction reciprocal space mapping
DOI10.11900/0412.1961.2019.00006
Indexed BySCI
Language英语
WOS Research AreaMetallurgy & Metallurgical Engineering
WOS SubjectMetallurgy & Metallurgical Engineering
WOS IDWOS:000516535300007
PublisherSCIENCE PRESS
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/137702
Collection中国科学院金属研究所
Corresponding AuthorZhang Lei; Wang Yuanming
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
Recommended Citation
GB/T 7714
Li Changji,Zou Minjie,Zhang Lei,et al. High-Resolution X-Ray Diffraction Analysis of Epitaxial Films[J]. ACTA METALLURGICA SINICA,2020,56(1):99-111.
APA Li Changji,Zou Minjie,Zhang Lei,Wang Yuanming,&Wang Sucheng.(2020).High-Resolution X-Ray Diffraction Analysis of Epitaxial Films.ACTA METALLURGICA SINICA,56(1),99-111.
MLA Li Changji,et al."High-Resolution X-Ray Diffraction Analysis of Epitaxial Films".ACTA METALLURGICA SINICA 56.1(2020):99-111.
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