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Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film
Yan, C. H.1,2; Wei, F.1,2; Bai, Y.1,2; Wang, F.1,2; Zhang, A. Q.1,2,3; Ma, S.1; Liu, W.1; Zhang, Z. D.1
Corresponding AuthorMa, S.(songma@imr.ac.cn)
2020-05-01
Source PublicationJOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN1005-0302
Volume44Pages:223-228
AbstractTopological crystalline insulator (TCI) as a new type of topological materials has attracted extensive research interests for its tunable topological properties. Due its symmetry topological protection essence, the structure investigation provides a solid basement for tuning its topological transport properties. On SrTiO3 (111) substrate, the SnTe film was found to be epitaxial growth only along [001] while not [111] direction. The detailed structural study was performed and a structural model was proposed to elucidate epitaxial growth of the SnTe (001) film. The transport properties of SnTe (001) film were further investigated and a typical weak anti-localization effect was observed. By Pb-doping into SnTe, the bulk carriers were inhibited and its topological surface states were strengthened to induce the enhanced surface transport contribution. With tunable multiple transport channels from the even Dirac cones, the TCI SnTe film systems will have the potential application in future spintronics devices. (C) 2020 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
KeywordTopological crystalline insulator Surface state SnTe
Funding OrganizationNational Natural Science Foundation of China ; National Key R&D Program of China
DOI10.1016/j.jmst.2019.10.033
Indexed BySCI
Language英语
Funding ProjectNational Natural Science Foundation of China[51571195] ; National Natural Science Foundation of China[51590883] ; National Key R&D Program of China[2017YFA0206301]
WOS Research AreaMaterials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectMaterials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS IDWOS:000522863000023
PublisherJOURNAL MATER SCI TECHNOL
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/137963
Collection中国科学院金属研究所
Corresponding AuthorMa, S.
Affiliation1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China
Recommended Citation
GB/T 7714
Yan, C. H.,Wei, F.,Bai, Y.,et al. Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2020,44:223-228.
APA Yan, C. H..,Wei, F..,Bai, Y..,Wang, F..,Zhang, A. Q..,...&Zhang, Z. D..(2020).Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,44,223-228.
MLA Yan, C. H.,et al."Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 44(2020):223-228.
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