Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film

doi:10.1016/j.jmst.2019.10.033

IMR OpenIR

	Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film
	Yan, C. H.1,2; Wei, F.1,2; Bai, Y.1,2; Wang, F.1,2; Zhang, A. Q.1,2,3; Ma, S.1; Liu, W.1; Zhang, Z. D.1
通讯作者	Ma, S.(songma@imr.ac.cn)
	2020-05-01
发表期刊	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
ISSN	1005-0302
卷号	44 页码:223-228
摘要	Topological crystalline insulator (TCI) as a new type of topological materials has attracted extensive research interests for its tunable topological properties. Due its symmetry topological protection essence, the structure investigation provides a solid basement for tuning its topological transport properties. On SrTiO3 (111) substrate, the SnTe film was found to be epitaxial growth only along [001] while not [111] direction. The detailed structural study was performed and a structural model was proposed to elucidate epitaxial growth of the SnTe (001) film. The transport properties of SnTe (001) film were further investigated and a typical weak anti-localization effect was observed. By Pb-doping into SnTe, the bulk carriers were inhibited and its topological surface states were strengthened to induce the enhanced surface transport contribution. With tunable multiple transport channels from the even Dirac cones, the TCI SnTe film systems will have the potential application in future spintronics devices. (C) 2020 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
关键词	Topological crystalline insulator Surface state SnTe
资助者	National Natural Science Foundation of China ; National Key R&D Program of China
DOI	10.1016/j.jmst.2019.10.033
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51571195] ; National Natural Science Foundation of China[51590883] ; National Key R&D Program of China[2017YFA0206301]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000522863000023
出版者	JOURNAL MATER SCI TECHNOL
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/137963
专题	中国科学院金属研究所
通讯作者	Ma, S.
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Peoples R China
推荐引用方式 GB/T 7714	Yan, C. H.,Wei, F.,Bai, Y.,et al. Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2020,44:223-228.
APA	Yan, C. H..,Wei, F..,Bai, Y..,Wang, F..,Zhang, A. Q..,...&Zhang, Z. D..(2020).Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,44,223-228.
MLA	Yan, C. H.,et al."Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 44(2020):223-228.