High-Performance Ultraviolet-Visible Light-Sensitive 2D-MoS2/1D-ZnO Heterostructure Photodetectors

doi:10.1002/slct.202000746

IMR OpenIR

	High-Performance Ultraviolet-Visible Light-Sensitive 2D-MoS2/1D-ZnO Heterostructure Photodetectors
	Zhang, Jian 1,2; Liu, Yiting 1; Zhang, Xinglai 2; Ma, Zongyi 2; Li, Jing 2; Zhang, Cai 2; Shaikenova, Altynay 3; Renat, Beisenov 3; Liu, Baodan 2
通讯作者	Zhang, Xinglai(zhangxl@imr.ac.cn) ; Liu, Baodan(baodanliu@imr.ac.cn)
	2020-03-20
发表期刊	CHEMISTRYSELECT
ISSN	2365-6549
卷号	5 期号:11 页码:3438-3444
摘要	Two-dimensional (2D) transition-metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have recently attracted extensive interest for building future optoelectronic devices. However, the limited light absorption, low photoresponsivity and slow response speed in visible range inhibit their further application. Here, we proposed a promising approach to realize the high-performance photodetectors (PDs) by constructing 2D-MoS2 flake/1D-ZnO nanowire mixed-dimensional heterostructures. The integration of 1D-ZnO on p-type or n-type MoS2 to form the mixed-dimensional 2D-MoS2/1D-ZnO heterostructure PDs not only broadens the light response range, but also improves the photoresponsivity and response time of 2D-MoS2 flakes. Under the 365 nm light illumination, the photoresponsivity, external quantum efficiency and response time of p-MoS2/n-ZnO PDs are as high as 24.36 A/W, 8.28x10(3) % and 0.9 s, respectively. Under 532 nm light illumination, the photoresponsivity, external quantum efficiency and response time are estimated to be 0.35 A/W, 80.9 % and 140 ms, respectively. These properties are superior or comparable to the performance of other reported 2D-MoS2 flake PDs. This work provides a possible strategy for the realization of high-performance optoelectronic devices by the integration of 2D-MoS2 and 1D-ZnO to form mixed-dimensional heterostructures.
关键词	Heterostructure low-dimension molybdenum disulfide photodetectors zinc oxide
资助者	Shenyang Science and Technology Program ; National Natural Science Foundation of China ; Liaoning Province Natural Science Fund Proram ; Youth Innovation Promotion Association, Chinese Academy of Sciences ; Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University)
DOI	10.1002/slct.202000746
收录类别	SCI
语种	英语
资助项目	Shenyang Science and Technology Program[18-013-0-52] ; National Natural Science Foundation of China[51702326] ; National Natural Science Foundation of China[51872296] ; Liaoning Province Natural Science Fund Proram[2019MS-333] ; Youth Innovation Promotion Association, Chinese Academy of Sciences[2019197] ; Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University)[OEMT-2017-KF-02]
WOS研究方向	Chemistry
WOS类目	Chemistry, Multidisciplinary
WOS记录号	WOS:000520610800039
出版者	WILEY-V C H VERLAG GMBH
引用统计	被引频次：44[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/138030
专题	中国科学院金属研究所
通讯作者	Zhang, Xinglai; Liu, Baodan
作者单位	1.Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang 110870, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.Satbayev Univ, Dept Engn Phys, Alma Ata 050013, Kazakhstan
推荐引用方式 GB/T 7714	Zhang, Jian,Liu, Yiting,Zhang, Xinglai,et al. High-Performance Ultraviolet-Visible Light-Sensitive 2D-MoS2/1D-ZnO Heterostructure Photodetectors[J]. CHEMISTRYSELECT,2020,5(11):3438-3444.
APA	Zhang, Jian.,Liu, Yiting.,Zhang, Xinglai.,Ma, Zongyi.,Li, Jing.,...&Liu, Baodan.(2020).High-Performance Ultraviolet-Visible Light-Sensitive 2D-MoS2/1D-ZnO Heterostructure Photodetectors.CHEMISTRYSELECT,5(11),3438-3444.
MLA	Zhang, Jian,et al."High-Performance Ultraviolet-Visible Light-Sensitive 2D-MoS2/1D-ZnO Heterostructure Photodetectors".CHEMISTRYSELECT 5.11(2020):3438-3444.